Design and validation of a-SiC/SiN hybrid photonic platform for integrated quantum photonics

Recent efforts in quantum photonics emphasize on-chip generation, manipulation, and detection of single photons for quantum computing and quantum communication. In quantum photonic chips, single photons are often generated using parametric down-conversion and quantum dots. Quantum dots are particula...

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Main Authors: Naresh Sharma, Zizheng Li, Bruno Lopez-Rodriguez, Joey Vrugt, Stijn van der Waal, Luozhen Li, Roald van der Kolk, Philip J Poole, Dan Dalacu, Iman Esmaeil Zadeh
Format: Article
Language:English
Published: IOP Publishing 2024-01-01
Series:Materials for Quantum Technology
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Online Access:https://doi.org/10.1088/2633-4356/ad7c0e
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author Naresh Sharma
Zizheng Li
Bruno Lopez-Rodriguez
Joey Vrugt
Stijn van der Waal
Luozhen Li
Roald van der Kolk
Philip J Poole
Dan Dalacu
Iman Esmaeil Zadeh
author_facet Naresh Sharma
Zizheng Li
Bruno Lopez-Rodriguez
Joey Vrugt
Stijn van der Waal
Luozhen Li
Roald van der Kolk
Philip J Poole
Dan Dalacu
Iman Esmaeil Zadeh
author_sort Naresh Sharma
collection DOAJ
description Recent efforts in quantum photonics emphasize on-chip generation, manipulation, and detection of single photons for quantum computing and quantum communication. In quantum photonic chips, single photons are often generated using parametric down-conversion and quantum dots. Quantum dots are particularly attractive due to their on-demand generation of high-purity single photons. Different photonic platforms are used to manipulate the states of the photons. Nevertheless, no single platform satisfies all the requirements of quantum photonics, as each platform has its merits and shortcomings. For example, the thin-film silicon nitride (SiN) platform provides ultra-low loss on the order of 0.1 dB m ^−1 , but is incompatible with dense integration , requiring large bending radii. On the other hand, silicon on insulator offers a high refractive index contrast for dense integration but has a high absorption coefficient at the emission wavelengths (800–970 nm) of state-of-the-art QDs. Amorphous silicon carbide (a-SiC) has emerged as an alternative with a high refractive index (higher than SiN), an extended transparency window compared to Silicon, and a thermo-optic coefficient three times higher than that of SiN, which is crucial for tuning photonic devices on a chip. With the vision of realizing a quantum photonic integrated circuit, we explore the hybrid integration of SiN/a-SiC photonic platform with quantum dots and superconducting nanowire single-photon detectors. We validate our hybrid platform using a brief literature study, proof-of-principle experiments, and complementary simulations. As a proof-of-principle, we show a quantum dot embedded in nanowires (for deterministic micro-transfer and better integration) that emits single photons at 885 nm with a purity of 0.011 and a lifetime of 0.98 ns. Furthermore, we design and simulate an adiabatic coupler between two photonic platforms, a-SiC and SiN, by aiming to use the benefits of both platforms, i.e. dense integration and low losses, respectively. Our design couples the light from SiN waveguide to a-SiC waveguide with 96% efficiency at 885 nm wavelength. Our hybrid platform can be used to demonstrate on-chip quantum experiments such as Hong–Ou–Mandel, where we can design a large optical delay line in SiN and an interference circuit in a-SiC.
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spelling doaj-art-d93989b753ac4d55977643adcb00a6c72025-01-20T11:32:18ZengIOP PublishingMaterials for Quantum Technology2633-43562024-01-014303540110.1088/2633-4356/ad7c0eDesign and validation of a-SiC/SiN hybrid photonic platform for integrated quantum photonicsNaresh Sharma0https://orcid.org/0009-0005-6489-8512Zizheng Li1https://orcid.org/0000-0001-8139-8660Bruno Lopez-Rodriguez2Joey Vrugt3Stijn van der Waal4https://orcid.org/0009-0007-8663-730XLuozhen Li5https://orcid.org/0009-0006-2265-3418Roald van der Kolk6Philip J Poole7Dan Dalacu8https://orcid.org/0000-0001-6204-3952Iman Esmaeil Zadeh9https://orcid.org/0000-0002-3833-2508Department of Imaging Physics (ImPhys), Faculty of Applied Sciences, Delft University of Technology , Delft 2628 CJ, The NetherlandsDepartment of Imaging Physics (ImPhys), Faculty of Applied Sciences, Delft University of Technology , Delft 2628 CJ, The NetherlandsDepartment of Imaging Physics (ImPhys), Faculty of Applied Sciences, Delft University of Technology , Delft 2628 CJ, The NetherlandsDepartment of Imaging Physics (ImPhys), Faculty of Applied Sciences, Delft University of Technology , Delft 2628 CJ, The NetherlandsDepartment of Imaging Physics (ImPhys), Faculty of Applied Sciences, Delft University of Technology , Delft 2628 CJ, The NetherlandsDepartment of Imaging Physics (ImPhys), Faculty of Applied Sciences, Delft University of Technology , Delft 2628 CJ, The NetherlandsDepartment of Imaging Physics (ImPhys), Faculty of Applied Sciences, Delft University of Technology , Delft 2628 CJ, The NetherlandsNational Research Council Canada , Ottawa, ON, CanadaNational Research Council Canada , Ottawa, ON, CanadaDepartment of Imaging Physics (ImPhys), Faculty of Applied Sciences, Delft University of Technology , Delft 2628 CJ, The NetherlandsRecent efforts in quantum photonics emphasize on-chip generation, manipulation, and detection of single photons for quantum computing and quantum communication. In quantum photonic chips, single photons are often generated using parametric down-conversion and quantum dots. Quantum dots are particularly attractive due to their on-demand generation of high-purity single photons. Different photonic platforms are used to manipulate the states of the photons. Nevertheless, no single platform satisfies all the requirements of quantum photonics, as each platform has its merits and shortcomings. For example, the thin-film silicon nitride (SiN) platform provides ultra-low loss on the order of 0.1 dB m ^−1 , but is incompatible with dense integration , requiring large bending radii. On the other hand, silicon on insulator offers a high refractive index contrast for dense integration but has a high absorption coefficient at the emission wavelengths (800–970 nm) of state-of-the-art QDs. Amorphous silicon carbide (a-SiC) has emerged as an alternative with a high refractive index (higher than SiN), an extended transparency window compared to Silicon, and a thermo-optic coefficient three times higher than that of SiN, which is crucial for tuning photonic devices on a chip. With the vision of realizing a quantum photonic integrated circuit, we explore the hybrid integration of SiN/a-SiC photonic platform with quantum dots and superconducting nanowire single-photon detectors. We validate our hybrid platform using a brief literature study, proof-of-principle experiments, and complementary simulations. As a proof-of-principle, we show a quantum dot embedded in nanowires (for deterministic micro-transfer and better integration) that emits single photons at 885 nm with a purity of 0.011 and a lifetime of 0.98 ns. Furthermore, we design and simulate an adiabatic coupler between two photonic platforms, a-SiC and SiN, by aiming to use the benefits of both platforms, i.e. dense integration and low losses, respectively. Our design couples the light from SiN waveguide to a-SiC waveguide with 96% efficiency at 885 nm wavelength. Our hybrid platform can be used to demonstrate on-chip quantum experiments such as Hong–Ou–Mandel, where we can design a large optical delay line in SiN and an interference circuit in a-SiC.https://doi.org/10.1088/2633-4356/ad7c0equantum dotssingle photonquantum photonic integrated circuitssuperconducting nanowire single photon detectorssilicon carbide
spellingShingle Naresh Sharma
Zizheng Li
Bruno Lopez-Rodriguez
Joey Vrugt
Stijn van der Waal
Luozhen Li
Roald van der Kolk
Philip J Poole
Dan Dalacu
Iman Esmaeil Zadeh
Design and validation of a-SiC/SiN hybrid photonic platform for integrated quantum photonics
Materials for Quantum Technology
quantum dots
single photon
quantum photonic integrated circuits
superconducting nanowire single photon detectors
silicon carbide
title Design and validation of a-SiC/SiN hybrid photonic platform for integrated quantum photonics
title_full Design and validation of a-SiC/SiN hybrid photonic platform for integrated quantum photonics
title_fullStr Design and validation of a-SiC/SiN hybrid photonic platform for integrated quantum photonics
title_full_unstemmed Design and validation of a-SiC/SiN hybrid photonic platform for integrated quantum photonics
title_short Design and validation of a-SiC/SiN hybrid photonic platform for integrated quantum photonics
title_sort design and validation of a sic sin hybrid photonic platform for integrated quantum photonics
topic quantum dots
single photon
quantum photonic integrated circuits
superconducting nanowire single photon detectors
silicon carbide
url https://doi.org/10.1088/2633-4356/ad7c0e
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