High‐Efficiency Flexible GaAs/InGaAs Dual‐Junction Solar Cells Fabricated by Metallic Nanoparticle‐Based Wafer Bonding
Multijunction solar cells made from highly lattice‐mismatched (LMM) material systems offer an optimal bandgap combination for the ultrahigh conversion of solar energy to electricity. Conventional fabrication techniques for multijunction cells, such as metamorphic epitaxy, direct wafer bonding, and a...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-02-01
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| Series: | Small Structures |
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| Online Access: | https://doi.org/10.1002/sstr.202400421 |
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| author | Yeongho Kim Suho Park Thuy Thi Nguyen Jiyeon Jeon Byong Sun Chun Sang Jun Lee |
| author_facet | Yeongho Kim Suho Park Thuy Thi Nguyen Jiyeon Jeon Byong Sun Chun Sang Jun Lee |
| author_sort | Yeongho Kim |
| collection | DOAJ |
| description | Multijunction solar cells made from highly lattice‐mismatched (LMM) material systems offer an optimal bandgap combination for the ultrahigh conversion of solar energy to electricity. Conventional fabrication techniques for multijunction cells, such as metamorphic epitaxy, direct wafer bonding, and adhesive wafer bonding, are still expensive and produce low yields owing to the use of complex process steps and sophisticated equipment. Herein, flexible GaAs/In0.53Ga0.47As dual‐junction solar cells with a large lattice mismatch of 3.7% between the subcells are fabricated using an indium‐tin‐oxide (ITO) nanoparticle‐based wafer bonding process. The ITO bonding layer electrically and optically connecting the GaAs top and InGaAs bottom cells shows a low series resistance of 5.7 × 10−2 Ω cm−2 and a high optical transmission of 90% in the infrared range of 870–1800 nm. The dark current characteristic of the ITO‐bonded dual‐junction cell exhibits a good rectifying behavior with a high on–off ratio of ≈105 at ±2 V. Under 1 sun AM 1.5G illumination, a high power conversion efficiency of 28.5% is achieved for the two‐terminal series‐connected dual‐junction cell, with an average external radiative efficiency of 2.6%. In these findings, it is suggested that ITO nanoparticle‐based wafer bonding may be a facile and cost‐effective route for fabricating LMM solar cells, potentially overcoming the Shockley–Queisser efficiency limit. |
| format | Article |
| id | doaj-art-d8e4f0062f52417588e7db3edb6677ac |
| institution | Kabale University |
| issn | 2688-4062 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Wiley-VCH |
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| series | Small Structures |
| spelling | doaj-art-d8e4f0062f52417588e7db3edb6677ac2025-02-04T08:10:21ZengWiley-VCHSmall Structures2688-40622025-02-0162n/an/a10.1002/sstr.202400421High‐Efficiency Flexible GaAs/InGaAs Dual‐Junction Solar Cells Fabricated by Metallic Nanoparticle‐Based Wafer BondingYeongho Kim0Suho Park1Thuy Thi Nguyen2Jiyeon Jeon3Byong Sun Chun4Sang Jun Lee5School of Materials Science and Engineering Chonnam National University Gwangju 61186 Republic of KoreaStrategic Technology Research Institute Korea Research Institute of Standards and Science Daejeon 34113 Republic of KoreaStrategic Technology Research Institute Korea Research Institute of Standards and Science Daejeon 34113 Republic of KoreaStrategic Technology Research Institute Korea Research Institute of Standards and Science Daejeon 34113 Republic of KoreaStrategic Technology Research Institute Korea Research Institute of Standards and Science Daejeon 34113 Republic of KoreaStrategic Technology Research Institute Korea Research Institute of Standards and Science Daejeon 34113 Republic of KoreaMultijunction solar cells made from highly lattice‐mismatched (LMM) material systems offer an optimal bandgap combination for the ultrahigh conversion of solar energy to electricity. Conventional fabrication techniques for multijunction cells, such as metamorphic epitaxy, direct wafer bonding, and adhesive wafer bonding, are still expensive and produce low yields owing to the use of complex process steps and sophisticated equipment. Herein, flexible GaAs/In0.53Ga0.47As dual‐junction solar cells with a large lattice mismatch of 3.7% between the subcells are fabricated using an indium‐tin‐oxide (ITO) nanoparticle‐based wafer bonding process. The ITO bonding layer electrically and optically connecting the GaAs top and InGaAs bottom cells shows a low series resistance of 5.7 × 10−2 Ω cm−2 and a high optical transmission of 90% in the infrared range of 870–1800 nm. The dark current characteristic of the ITO‐bonded dual‐junction cell exhibits a good rectifying behavior with a high on–off ratio of ≈105 at ±2 V. Under 1 sun AM 1.5G illumination, a high power conversion efficiency of 28.5% is achieved for the two‐terminal series‐connected dual‐junction cell, with an average external radiative efficiency of 2.6%. In these findings, it is suggested that ITO nanoparticle‐based wafer bonding may be a facile and cost‐effective route for fabricating LMM solar cells, potentially overcoming the Shockley–Queisser efficiency limit.https://doi.org/10.1002/sstr.202400421indium tin oxideslattice mismatchesmultijunction solar cellsnanoparticleswafer bondings |
| spellingShingle | Yeongho Kim Suho Park Thuy Thi Nguyen Jiyeon Jeon Byong Sun Chun Sang Jun Lee High‐Efficiency Flexible GaAs/InGaAs Dual‐Junction Solar Cells Fabricated by Metallic Nanoparticle‐Based Wafer Bonding Small Structures indium tin oxides lattice mismatches multijunction solar cells nanoparticles wafer bondings |
| title | High‐Efficiency Flexible GaAs/InGaAs Dual‐Junction Solar Cells Fabricated by Metallic Nanoparticle‐Based Wafer Bonding |
| title_full | High‐Efficiency Flexible GaAs/InGaAs Dual‐Junction Solar Cells Fabricated by Metallic Nanoparticle‐Based Wafer Bonding |
| title_fullStr | High‐Efficiency Flexible GaAs/InGaAs Dual‐Junction Solar Cells Fabricated by Metallic Nanoparticle‐Based Wafer Bonding |
| title_full_unstemmed | High‐Efficiency Flexible GaAs/InGaAs Dual‐Junction Solar Cells Fabricated by Metallic Nanoparticle‐Based Wafer Bonding |
| title_short | High‐Efficiency Flexible GaAs/InGaAs Dual‐Junction Solar Cells Fabricated by Metallic Nanoparticle‐Based Wafer Bonding |
| title_sort | high efficiency flexible gaas ingaas dual junction solar cells fabricated by metallic nanoparticle based wafer bonding |
| topic | indium tin oxides lattice mismatches multijunction solar cells nanoparticles wafer bondings |
| url | https://doi.org/10.1002/sstr.202400421 |
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