High Improvement in Conversion Efficiency of μc-SiGe Thin-Film Solar Cells with Field-Enhancement Layers
The improved performance for hydrogenated microcrystalline silicon-germanium (μc-Si1−xGex:H, x~0.1) p-i-n single solar cells with hydrogenated microcrystalline silicon (μc-Si:H) field-enhancement layers (FELs) is demonstrated for the first time. The fill factor (FF) and conversion efficiency (η) inc...
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| Format: | Article |
| Language: | English |
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Wiley
2012-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2012/817825 |
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| author | Shu-Hung Yu Wei Lin Yu-Hung Chen Chun-Yen Chang |
| author_facet | Shu-Hung Yu Wei Lin Yu-Hung Chen Chun-Yen Chang |
| author_sort | Shu-Hung Yu |
| collection | DOAJ |
| description | The improved performance for hydrogenated microcrystalline silicon-germanium (μc-Si1−xGex:H, x~0.1) p-i-n single solar cells with hydrogenated microcrystalline silicon (μc-Si:H) field-enhancement layers (FELs) is demonstrated for the first time. The fill factor (FF) and conversion efficiency (η) increase by about 19% and 28% when the thickness of the μc-Si FEL is increased from 0 to 200 nm, it is attributed to the longer hole life-time and enhanced electric field in the μc-Si0.9Ge0.1:H layer. Therefore, we can successfully manufacture high-performance μc-SiGe:H solar cells with the thickness of absorbers smaller than 1 μm by conducting FELs. Moreover, the simulation tool is used to simulate the current-voltage (J-V) curve, thus we can investigate the carrier transport in the absorber of μc-Si0.9Ge0.1:H solar cells with different EFLs. |
| format | Article |
| id | doaj-art-d8927fd6e7394f40b75db5aff7bcc821 |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2012-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-d8927fd6e7394f40b75db5aff7bcc8212025-02-03T01:21:52ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2012-01-01201210.1155/2012/817825817825High Improvement in Conversion Efficiency of μc-SiGe Thin-Film Solar Cells with Field-Enhancement LayersShu-Hung Yu0Wei Lin1Yu-Hung Chen2Chun-Yen Chang3Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, TaiwanDepartment of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, TaiwanPhotovoltaic Technology Division, Green Energy and Environment Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, TaiwanDepartment of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, TaiwanThe improved performance for hydrogenated microcrystalline silicon-germanium (μc-Si1−xGex:H, x~0.1) p-i-n single solar cells with hydrogenated microcrystalline silicon (μc-Si:H) field-enhancement layers (FELs) is demonstrated for the first time. The fill factor (FF) and conversion efficiency (η) increase by about 19% and 28% when the thickness of the μc-Si FEL is increased from 0 to 200 nm, it is attributed to the longer hole life-time and enhanced electric field in the μc-Si0.9Ge0.1:H layer. Therefore, we can successfully manufacture high-performance μc-SiGe:H solar cells with the thickness of absorbers smaller than 1 μm by conducting FELs. Moreover, the simulation tool is used to simulate the current-voltage (J-V) curve, thus we can investigate the carrier transport in the absorber of μc-Si0.9Ge0.1:H solar cells with different EFLs.http://dx.doi.org/10.1155/2012/817825 |
| spellingShingle | Shu-Hung Yu Wei Lin Yu-Hung Chen Chun-Yen Chang High Improvement in Conversion Efficiency of μc-SiGe Thin-Film Solar Cells with Field-Enhancement Layers International Journal of Photoenergy |
| title | High Improvement in Conversion Efficiency of μc-SiGe Thin-Film Solar Cells with Field-Enhancement Layers |
| title_full | High Improvement in Conversion Efficiency of μc-SiGe Thin-Film Solar Cells with Field-Enhancement Layers |
| title_fullStr | High Improvement in Conversion Efficiency of μc-SiGe Thin-Film Solar Cells with Field-Enhancement Layers |
| title_full_unstemmed | High Improvement in Conversion Efficiency of μc-SiGe Thin-Film Solar Cells with Field-Enhancement Layers |
| title_short | High Improvement in Conversion Efficiency of μc-SiGe Thin-Film Solar Cells with Field-Enhancement Layers |
| title_sort | high improvement in conversion efficiency of μc sige thin film solar cells with field enhancement layers |
| url | http://dx.doi.org/10.1155/2012/817825 |
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