APA (7th ed.) Citation

Schleuning, M., Kölbach, M., Abdi, F. F., Schwarzburg, K., Stolterfoht, M., Eichberger, R., . . . Hempel, H. Generalized Method to Extract Carrier Diffusion Length from Photoconductivity Transients: Cases of BiVO_{4}, Halide Perovskites, and Amorphous and Crystalline Silicon. American Physical Society.

Chicago Style (17th ed.) Citation

Schleuning, Markus, Moritz Kölbach, Fatwa F. Abdi, Klaus Schwarzburg, Martin Stolterfoht, Rainer Eichberger, Roel van de Krol, Dennis Friedrich, and Hannes Hempel. Generalized Method to Extract Carrier Diffusion Length from Photoconductivity Transients: Cases of BiVO_{4}, Halide Perovskites, and Amorphous and Crystalline Silicon. American Physical Society.

MLA (9th ed.) Citation

Schleuning, Markus, et al. Generalized Method to Extract Carrier Diffusion Length from Photoconductivity Transients: Cases of BiVO_{4}, Halide Perovskites, and Amorphous and Crystalline Silicon. American Physical Society.