High-Precision Small-Signal Model for Double-Channel–High-Electron-Mobility Transistors Based on the Double-Channel Coupling Effect
This paper presents a new small-signal model for double-channel (DC)–high-electron-mobility transistors, developed through an analysis of the unique coupling effects between channels in devices. Unlike conventional single-channel HEMTs, where electrons only transport laterally in the channel, DC-HEM...
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| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-02-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/16/2/200 |
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