High-Precision Small-Signal Model for Double-Channel–High-Electron-Mobility Transistors Based on the Double-Channel Coupling Effect
This paper presents a new small-signal model for double-channel (DC)–high-electron-mobility transistors, developed through an analysis of the unique coupling effects between channels in devices. Unlike conventional single-channel HEMTs, where electrons only transport laterally in the channel, DC-HEM...
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| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-02-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/16/2/200 |
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| Summary: | This paper presents a new small-signal model for double-channel (DC)–high-electron-mobility transistors, developed through an analysis of the unique coupling effects between channels in devices. Unlike conventional single-channel HEMTs, where electrons only transport laterally in the channel, DC-HEMTs exhibit additional vertical transport between the two channels along the material direction. This double-channel coupling effect significantly limits the applicability of traditional small-signal models to DC-HEMTs. Firstly, the coupling effect between the two channels is characterized by introducing the double-channel coupling sub-model, which consists of <i>R</i><sub>GaN</sub>, <i>R</i><sub>AlN</sub>, and <i>C</i><sub>AlN</sub>. At the same time, by introducing parameters gm<sub>_upper</sub> and gm<sub>_lower</sub>, the new model can accurately characterize the properties of double channels. Secondly, initial values for <i>R</i><sub>GaN</sub>, <i>R</i><sub>AlN</sub>, and <i>C</i><sub>AlN</sub> are calculated based on the device’s physical structure and material properties. Similarly, initial values for <i>gm</i><sub>_upper</sub> and <i>gm</i><sub>_lower</sub> are derived from the device’s DC measurement and TCAD simulation results. Furthermore, a comprehensive parameter extraction method enables the optimized extraction of intrinsic parameters, completing the model’s construction. Finally, validation of the model’s fitting reveals a significantly reduced error compared to traditional small-signal models. This enhanced accuracy not only verifies the precise representation of the device’s physical characteristics but also demonstrates the model’s effectiveness. |
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| ISSN: | 2072-666X |