Modulation Electronic Properties of Silicane/SnSe2 Van der Waals Heterostructures Using External Force and Electric Field
In recent years, much interest in the study of Van der Waals heterostructures (vdWhs) has arisen. This has led to a significant amount of fundamental research being produced, from which novel optoelectronic applications have been established. By using first principles, we analyze the electronic stru...
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Wiley
2021-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2021/9986781 |
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| author | Gang Xu Yelu He |
| author_facet | Gang Xu Yelu He |
| author_sort | Gang Xu |
| collection | DOAJ |
| description | In recent years, much interest in the study of Van der Waals heterostructures (vdWhs) has arisen. This has led to a significant amount of fundamental research being produced, from which novel optoelectronic applications have been established. By using first principles, we analyze the electronic structure of silicane/SnSe2 vdWhs in the response to an externally applied electric field and a normal strain. The results show that the silicane/SnSe2 vdWh acts as an indirect semiconductor when it is subjected to an applied electric field between −1 and 0.1 V/Å and becomes a metal in the 0.2 to 1 V/Å range. Significantly, the electronic band alignments of the silicane/SnSe2 vdWhs are modified from a type-II to a type-I when a field of −0.7 V/Å is applied. Furthermore, it is determined that the silicane/SnSe2 vdWhs appears to have a semiconductor-metal phase transition at a strain of −5%. Our results indicate that the silicane/SnSe2 vdWhs have the potential for applications in novel high-performance optoelectronic devices. |
| format | Article |
| id | doaj-art-d5ee5c3238de44c091d0abe5bed169eb |
| institution | Kabale University |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2021-01-01 |
| publisher | Wiley |
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| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-d5ee5c3238de44c091d0abe5bed169eb2025-02-03T07:23:58ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422021-01-01202110.1155/2021/99867819986781Modulation Electronic Properties of Silicane/SnSe2 Van der Waals Heterostructures Using External Force and Electric FieldGang Xu0Yelu He1Department of Physics, Chongqing Three Gorges University, Wanzhou 404100, ChinaDepartment of Physics, Chongqing Three Gorges University, Wanzhou 404100, ChinaIn recent years, much interest in the study of Van der Waals heterostructures (vdWhs) has arisen. This has led to a significant amount of fundamental research being produced, from which novel optoelectronic applications have been established. By using first principles, we analyze the electronic structure of silicane/SnSe2 vdWhs in the response to an externally applied electric field and a normal strain. The results show that the silicane/SnSe2 vdWh acts as an indirect semiconductor when it is subjected to an applied electric field between −1 and 0.1 V/Å and becomes a metal in the 0.2 to 1 V/Å range. Significantly, the electronic band alignments of the silicane/SnSe2 vdWhs are modified from a type-II to a type-I when a field of −0.7 V/Å is applied. Furthermore, it is determined that the silicane/SnSe2 vdWhs appears to have a semiconductor-metal phase transition at a strain of −5%. Our results indicate that the silicane/SnSe2 vdWhs have the potential for applications in novel high-performance optoelectronic devices.http://dx.doi.org/10.1155/2021/9986781 |
| spellingShingle | Gang Xu Yelu He Modulation Electronic Properties of Silicane/SnSe2 Van der Waals Heterostructures Using External Force and Electric Field Advances in Materials Science and Engineering |
| title | Modulation Electronic Properties of Silicane/SnSe2 Van der Waals Heterostructures Using External Force and Electric Field |
| title_full | Modulation Electronic Properties of Silicane/SnSe2 Van der Waals Heterostructures Using External Force and Electric Field |
| title_fullStr | Modulation Electronic Properties of Silicane/SnSe2 Van der Waals Heterostructures Using External Force and Electric Field |
| title_full_unstemmed | Modulation Electronic Properties of Silicane/SnSe2 Van der Waals Heterostructures Using External Force and Electric Field |
| title_short | Modulation Electronic Properties of Silicane/SnSe2 Van der Waals Heterostructures Using External Force and Electric Field |
| title_sort | modulation electronic properties of silicane snse2 van der waals heterostructures using external force and electric field |
| url | http://dx.doi.org/10.1155/2021/9986781 |
| work_keys_str_mv | AT gangxu modulationelectronicpropertiesofsilicanesnse2vanderwaalsheterostructuresusingexternalforceandelectricfield AT yeluhe modulationelectronicpropertiesofsilicanesnse2vanderwaalsheterostructuresusingexternalforceandelectricfield |