Solid-state compound phase formation of TiSi2 thin films under stress
Different stress situations were created on an Si(100) wafer by depositing either Si3N4 or SiO2 thin films on the back side. Si3N4 has a different thermal expansion coefficient from that of SiO2. A thin Ti film was then deposited on the front side of the Si wafer. The structures were then annealed a...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Academy of Science of South Africa
2009-11-01
|
| Series: | South African Journal of Science |
| Online Access: | https://sajs.co.za/article/view/10227 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|