Anisotropic Chemical Etching of III—V Crystals Dissolution Slowness Surface and Application to GaAs
The analytical equation for the dissolution slowness surface of III–V crystals that belong to point group 4¯3 m is derived using a tensorial analysis of the anisotropic chemical dissolution. The role played by orientation functions in the generation of the dissolution slowness extrema is discussed....
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2004-01-01
|
| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1080/08827510310001616858 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|