Anisotropic Chemical Etching of III—V Crystals Dissolution Slowness Surface and Application to GaAs
The analytical equation for the dissolution slowness surface of III–V crystals that belong to point group 4¯3 m is derived using a tensorial analysis of the anisotropic chemical dissolution. The role played by orientation functions in the generation of the dissolution slowness extrema is discussed....
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| Format: | Article |
| Language: | English |
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Wiley
2004-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1080/08827510310001616858 |
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| _version_ | 1832564014711832576 |
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| author | C. R. Tellier G. Huve T. G. Leblois |
| author_facet | C. R. Tellier G. Huve T. G. Leblois |
| author_sort | C. R. Tellier |
| collection | DOAJ |
| description | The analytical equation for the dissolution slowness surface of III–V crystals that belong to point group 4¯3 m is derived using a tensorial analysis of the anisotropic chemical dissolution. The role played by orientation functions in the generation of the dissolution slowness extrema is discussed. Four different databases composed of dissolution constants are proposed. The final shape of cross-sectional dissolution profiles etched in differently oriented GaAs surfaces is analyzed and compared with published experimental results. Finally etching shapes of
micromachined membranes and mesa are derived showing that the anisotropy for the GaAs crystal is probably of type 2 rather than of type 1. |
| format | Article |
| id | doaj-art-d514ed5a85c340358c99dbc3362d1055 |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2004-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-d514ed5a85c340358c99dbc3362d10552025-02-03T01:12:03ZengWileyActive and Passive Electronic Components0882-75161563-50312004-01-0127313315410.1080/08827510310001616858Anisotropic Chemical Etching of III—V Crystals Dissolution Slowness Surface and Application to GaAsC. R. Tellier0G. Huve1T. G. Leblois2Laboratoire de Chronométrie Electronique et Piézoélectricité, E.N.SM.M., 26 chemin de l'épitaphe, Besançon Cedex 25030, FranceLaboratoire de Chronométrie Electronique et Piézoélectricité, E.N.SM.M., 26 chemin de l'épitaphe, Besançon Cedex 25030, FranceLaboratoire de Chronométrie Electronique et Piézoélectricité, E.N.SM.M., 26 chemin de l'épitaphe, Besançon Cedex 25030, FranceThe analytical equation for the dissolution slowness surface of III–V crystals that belong to point group 4¯3 m is derived using a tensorial analysis of the anisotropic chemical dissolution. The role played by orientation functions in the generation of the dissolution slowness extrema is discussed. Four different databases composed of dissolution constants are proposed. The final shape of cross-sectional dissolution profiles etched in differently oriented GaAs surfaces is analyzed and compared with published experimental results. Finally etching shapes of micromachined membranes and mesa are derived showing that the anisotropy for the GaAs crystal is probably of type 2 rather than of type 1.http://dx.doi.org/10.1080/08827510310001616858 |
| spellingShingle | C. R. Tellier G. Huve T. G. Leblois Anisotropic Chemical Etching of III—V Crystals Dissolution Slowness Surface and Application to GaAs Active and Passive Electronic Components |
| title | Anisotropic Chemical Etching of III—V Crystals Dissolution Slowness Surface and Application to GaAs |
| title_full | Anisotropic Chemical Etching of III—V Crystals Dissolution Slowness Surface and Application to GaAs |
| title_fullStr | Anisotropic Chemical Etching of III—V Crystals Dissolution Slowness Surface and Application to GaAs |
| title_full_unstemmed | Anisotropic Chemical Etching of III—V Crystals Dissolution Slowness Surface and Application to GaAs |
| title_short | Anisotropic Chemical Etching of III—V Crystals Dissolution Slowness Surface and Application to GaAs |
| title_sort | anisotropic chemical etching of iii v crystals dissolution slowness surface and application to gaas |
| url | http://dx.doi.org/10.1080/08827510310001616858 |
| work_keys_str_mv | AT crtellier anisotropicchemicaletchingofiiivcrystalsdissolutionslownesssurfaceandapplicationtogaas AT ghuve anisotropicchemicaletchingofiiivcrystalsdissolutionslownesssurfaceandapplicationtogaas AT tgleblois anisotropicchemicaletchingofiiivcrystalsdissolutionslownesssurfaceandapplicationtogaas |