Design and Simulation of a 12 GHz Two-Stage LNA for Ku-Band Telecommunication Applications
The Low Noise Amplifier (LNA) is typically the initial step in any microwave receiver circuit and is crucial to the receiver's quality. The design, analysis, and modeling of single-stage and multi-stage low-noise amplifiers combined with an optimal matching network at wideband frequencies betw...
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| Language: | English |
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University of Diyala
2025-06-01
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| Series: | Diyala Journal of Engineering Sciences |
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| Online Access: | https://djes.info/index.php/djes/article/view/1489 |
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| author | Ammar D. Fakhri Kahlan H. Hamid Mohammad Tariq Yaseen Mohammed I. Dawod |
| author_facet | Ammar D. Fakhri Kahlan H. Hamid Mohammad Tariq Yaseen Mohammed I. Dawod |
| author_sort | Ammar D. Fakhri |
| collection | DOAJ |
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The Low Noise Amplifier (LNA) is typically the initial step in any microwave receiver circuit and is crucial to the receiver's quality. The design, analysis, and modeling of single-stage and multi-stage low-noise amplifiers combined with an optimal matching network at wideband frequencies between 11 - 13 GHz are presented in this study. The amplifier circuit's heart, the embedded GaAs FET transistor MGF2407A in Advance Design System tool, operates in class AB mode with a drain source voltage of 4 V and a gate source voltage of -0.2 V. The matching circuit was constructed and optimized at the transistor's input and output after the source and load impedances were extracted using the source and load-pull technique. The stability factor of simulated amplifier was greater than 4 in the 11–13 GHz frequency range. The noise figure (NF) and power gain at 12 GHz were 34 dB and 0.391, respectively. The input and output sides have exceptionally low reflection coefficients, with values below -15 dB. According to simulation results, the LNA has a broad bandwidth of 2 GHz and an acceptable NF between 0.5 and 0.3 within the bandwidth range of the Ku-Band applications. This amplifier circuit model can be used to create and build various LNA circuits for a variety of uses.
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| format | Article |
| id | doaj-art-d4e8ae52e5ec496daceb4e65061addec |
| institution | OA Journals |
| issn | 1999-8716 2616-6909 |
| language | English |
| publishDate | 2025-06-01 |
| publisher | University of Diyala |
| record_format | Article |
| series | Diyala Journal of Engineering Sciences |
| spelling | doaj-art-d4e8ae52e5ec496daceb4e65061addec2025-08-20T02:39:02ZengUniversity of DiyalaDiyala Journal of Engineering Sciences1999-87162616-69092025-06-0118210.24237/djes.2024.18204Design and Simulation of a 12 GHz Two-Stage LNA for Ku-Band Telecommunication ApplicationsAmmar D. Fakhri0Kahlan H. Hamid1Mohammad Tariq Yaseen 2Mohammed I. Dawod 3Department of Electrical Engineering, University of Mosul, Mosul, IraqDepartment of Electrical Engineering, University of Mosul, Mosul, IraqDepartment of Electrical Engineering, University of Mosul, Mosul, IraqDepartment of Electrical Engineering, University of Mosul, Mosul, Iraq The Low Noise Amplifier (LNA) is typically the initial step in any microwave receiver circuit and is crucial to the receiver's quality. The design, analysis, and modeling of single-stage and multi-stage low-noise amplifiers combined with an optimal matching network at wideband frequencies between 11 - 13 GHz are presented in this study. The amplifier circuit's heart, the embedded GaAs FET transistor MGF2407A in Advance Design System tool, operates in class AB mode with a drain source voltage of 4 V and a gate source voltage of -0.2 V. The matching circuit was constructed and optimized at the transistor's input and output after the source and load impedances were extracted using the source and load-pull technique. The stability factor of simulated amplifier was greater than 4 in the 11–13 GHz frequency range. The noise figure (NF) and power gain at 12 GHz were 34 dB and 0.391, respectively. The input and output sides have exceptionally low reflection coefficients, with values below -15 dB. According to simulation results, the LNA has a broad bandwidth of 2 GHz and an acceptable NF between 0.5 and 0.3 within the bandwidth range of the Ku-Band applications. This amplifier circuit model can be used to create and build various LNA circuits for a variety of uses. https://djes.info/index.php/djes/article/view/1489ADS softwareGaAs FETLow noise amplifierMatching network (MN)Microstrip technologyMulti stage |
| spellingShingle | Ammar D. Fakhri Kahlan H. Hamid Mohammad Tariq Yaseen Mohammed I. Dawod Design and Simulation of a 12 GHz Two-Stage LNA for Ku-Band Telecommunication Applications Diyala Journal of Engineering Sciences ADS software GaAs FET Low noise amplifier Matching network (MN) Microstrip technology Multi stage |
| title | Design and Simulation of a 12 GHz Two-Stage LNA for Ku-Band Telecommunication Applications |
| title_full | Design and Simulation of a 12 GHz Two-Stage LNA for Ku-Band Telecommunication Applications |
| title_fullStr | Design and Simulation of a 12 GHz Two-Stage LNA for Ku-Band Telecommunication Applications |
| title_full_unstemmed | Design and Simulation of a 12 GHz Two-Stage LNA for Ku-Band Telecommunication Applications |
| title_short | Design and Simulation of a 12 GHz Two-Stage LNA for Ku-Band Telecommunication Applications |
| title_sort | design and simulation of a 12 ghz two stage lna for ku band telecommunication applications |
| topic | ADS software GaAs FET Low noise amplifier Matching network (MN) Microstrip technology Multi stage |
| url | https://djes.info/index.php/djes/article/view/1489 |
| work_keys_str_mv | AT ammardfakhri designandsimulationofa12ghztwostagelnaforkubandtelecommunicationapplications AT kahlanhhamid designandsimulationofa12ghztwostagelnaforkubandtelecommunicationapplications AT mohammadtariqyaseen designandsimulationofa12ghztwostagelnaforkubandtelecommunicationapplications AT mohammedidawod designandsimulationofa12ghztwostagelnaforkubandtelecommunicationapplications |