Controllable synthesis of nonlayered high-κ Mn3O4 single-crystal thin films for 2D electronics
Abstract Two-dimensional (2D) materials have been identified as promising candidates for future electronic devices. However, high dielectric constant (κ) materials, which can be integrated with 2D semiconductors, are still rare. Here, we report a hydrate-assisted thinning chemical vapor deposition (...
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Nature Portfolio
2025-01-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-025-56386-9 |
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| author | Jiashuai Yuan Chuanyong Jian Zhihui Shang Yu Yao Bicheng Wang Yixiang Li Rutao Wang Zhipeng Fu Meng Li Wenting Hong Xu He Qian Cai Wei Liu |
| author_facet | Jiashuai Yuan Chuanyong Jian Zhihui Shang Yu Yao Bicheng Wang Yixiang Li Rutao Wang Zhipeng Fu Meng Li Wenting Hong Xu He Qian Cai Wei Liu |
| author_sort | Jiashuai Yuan |
| collection | DOAJ |
| description | Abstract Two-dimensional (2D) materials have been identified as promising candidates for future electronic devices. However, high dielectric constant (κ) materials, which can be integrated with 2D semiconductors, are still rare. Here, we report a hydrate-assisted thinning chemical vapor deposition (CVD) technique to grow manganese oxide (Mn3O4) single crystal nanosheets, enabled by a strategy to minimize the substrate lattice mismatch and control the growth kinetics. The material demonstrated a dielectric constant up to 135, an equivalent oxide thickness (EOT) as low as 0.8 nm, and a breakdown field strength (E bd) exceeding 10 MV/cm. MoS2 field-effect transistors (FETs) integrated with Mn3O4 thin films through mechanical stacking method operate under low voltages (<1 V), achieving a near 108 Ion/Ioff ratio and a subthreshold swing (SS) as low as 84 mV/dec. The MoS2 FET exhibit nearly zero hysteresis (<2 mV/MV cm⁻¹) and a low drain-induced barrier lowering (~20 mV/V). This work further expands the family of 2D high-κ dielectric materials and provides a feasible exploration for the epitaxial growth of single-crystal thin films of non-layered materials. |
| format | Article |
| id | doaj-art-d4a9e6a2f58d4024a5306386a864be90 |
| institution | Kabale University |
| issn | 2041-1723 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-d4a9e6a2f58d4024a5306386a864be902025-01-26T12:41:58ZengNature PortfolioNature Communications2041-17232025-01-011611910.1038/s41467-025-56386-9Controllable synthesis of nonlayered high-κ Mn3O4 single-crystal thin films for 2D electronicsJiashuai Yuan0Chuanyong Jian1Zhihui Shang2Yu Yao3Bicheng Wang4Yixiang Li5Rutao Wang6Zhipeng Fu7Meng Li8Wenting Hong9Xu He10Qian Cai11Wei Liu12State Key Laboratory of Functional Crystals and Devices, Fujian Institute of Research on the Structure of Matter, Chinese Academy of SciencesState Key Laboratory of Functional Crystals and Devices, Fujian Institute of Research on the Structure of Matter, Chinese Academy of SciencesShandong Provincial Key Laboratory of Processing and Testing Technology of Glass & Functional Ceramics, School of Material Science and Engineering, Qilu University of Technology (Shandong Academy of Sciences)State Key Laboratory of Functional Crystals and Devices, Fujian Institute of Research on the Structure of Matter, Chinese Academy of SciencesState Key Laboratory of Functional Crystals and Devices, Fujian Institute of Research on the Structure of Matter, Chinese Academy of SciencesState Key Laboratory of Functional Crystals and Devices, Fujian Institute of Research on the Structure of Matter, Chinese Academy of SciencesShandong Provincial Key Laboratory of Processing and Testing Technology of Glass & Functional Ceramics, School of Material Science and Engineering, Qilu University of Technology (Shandong Academy of Sciences)State Key Laboratory of Functional Crystals and Devices, Fujian Institute of Research on the Structure of Matter, Chinese Academy of SciencesState Key Laboratory of Functional Crystals and Devices, Fujian Institute of Research on the Structure of Matter, Chinese Academy of SciencesState Key Laboratory of Functional Crystals and Devices, Fujian Institute of Research on the Structure of Matter, Chinese Academy of SciencesState Key Laboratory of Functional Crystals and Devices, Fujian Institute of Research on the Structure of Matter, Chinese Academy of SciencesState Key Laboratory of Functional Crystals and Devices, Fujian Institute of Research on the Structure of Matter, Chinese Academy of SciencesState Key Laboratory of Functional Crystals and Devices, Fujian Institute of Research on the Structure of Matter, Chinese Academy of SciencesAbstract Two-dimensional (2D) materials have been identified as promising candidates for future electronic devices. However, high dielectric constant (κ) materials, which can be integrated with 2D semiconductors, are still rare. Here, we report a hydrate-assisted thinning chemical vapor deposition (CVD) technique to grow manganese oxide (Mn3O4) single crystal nanosheets, enabled by a strategy to minimize the substrate lattice mismatch and control the growth kinetics. The material demonstrated a dielectric constant up to 135, an equivalent oxide thickness (EOT) as low as 0.8 nm, and a breakdown field strength (E bd) exceeding 10 MV/cm. MoS2 field-effect transistors (FETs) integrated with Mn3O4 thin films through mechanical stacking method operate under low voltages (<1 V), achieving a near 108 Ion/Ioff ratio and a subthreshold swing (SS) as low as 84 mV/dec. The MoS2 FET exhibit nearly zero hysteresis (<2 mV/MV cm⁻¹) and a low drain-induced barrier lowering (~20 mV/V). This work further expands the family of 2D high-κ dielectric materials and provides a feasible exploration for the epitaxial growth of single-crystal thin films of non-layered materials.https://doi.org/10.1038/s41467-025-56386-9 |
| spellingShingle | Jiashuai Yuan Chuanyong Jian Zhihui Shang Yu Yao Bicheng Wang Yixiang Li Rutao Wang Zhipeng Fu Meng Li Wenting Hong Xu He Qian Cai Wei Liu Controllable synthesis of nonlayered high-κ Mn3O4 single-crystal thin films for 2D electronics Nature Communications |
| title | Controllable synthesis of nonlayered high-κ Mn3O4 single-crystal thin films for 2D electronics |
| title_full | Controllable synthesis of nonlayered high-κ Mn3O4 single-crystal thin films for 2D electronics |
| title_fullStr | Controllable synthesis of nonlayered high-κ Mn3O4 single-crystal thin films for 2D electronics |
| title_full_unstemmed | Controllable synthesis of nonlayered high-κ Mn3O4 single-crystal thin films for 2D electronics |
| title_short | Controllable synthesis of nonlayered high-κ Mn3O4 single-crystal thin films for 2D electronics |
| title_sort | controllable synthesis of nonlayered high κ mn3o4 single crystal thin films for 2d electronics |
| url | https://doi.org/10.1038/s41467-025-56386-9 |
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