Inelastic resonant tunnelling through adjacent localised electronic states in van der Waals heterostructures
Abstract Van der Waals heterostructures offer unprecedented opportunities to design next stage functional electronic 2D devices. Most architectures of those devices incorporate large bandgap insulator – hBN as an encapsulating or tunnel barrier layers. Here, we use an architecture of gated vertical...
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| Language: | English |
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Nature Portfolio
2025-01-01
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| Series: | npj 2D Materials and Applications |
| Online Access: | https://doi.org/10.1038/s41699-025-00528-6 |
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| author | E. E. Vdovin K. Kapralov Yu. N. Khanin A. Margaryan K. Watanabe T. Taniguchi C. Yang S. V. Morozov D. A. Svintsov K. S. Novoselov D. A. Ghazaryan |
| author_facet | E. E. Vdovin K. Kapralov Yu. N. Khanin A. Margaryan K. Watanabe T. Taniguchi C. Yang S. V. Morozov D. A. Svintsov K. S. Novoselov D. A. Ghazaryan |
| author_sort | E. E. Vdovin |
| collection | DOAJ |
| description | Abstract Van der Waals heterostructures offer unprecedented opportunities to design next stage functional electronic 2D devices. Most architectures of those devices incorporate large bandgap insulator – hBN as an encapsulating or tunnel barrier layers. Here, we use an architecture of gated vertical tunnelling transistors to study a generic phenomenon of electron resonant tunnelling through adjacent localised electronic states in hBN barriers. We demonstrate that in the case of two localised electronic states, the tunnelling can be of inelastic nature giving rise to explicitly strong resonant features. It allows accurate tunnelling spectroscopy of delicate features of emitting and collecting layer electronic density of states, such as second neutrality point bandgap of moiré monolayer and electric field induced bandgap of Bernal bilayer graphene. Our findings enrich the perception of interaction mechanisms among the localised electronic states in hBN barriers paving the way for future explorations into their applications. |
| format | Article |
| id | doaj-art-d48b5b33e28b40a48efe1359bf303c9c |
| institution | Kabale University |
| issn | 2397-7132 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | npj 2D Materials and Applications |
| spelling | doaj-art-d48b5b33e28b40a48efe1359bf303c9c2025-01-26T12:36:13ZengNature Portfolionpj 2D Materials and Applications2397-71322025-01-01911710.1038/s41699-025-00528-6Inelastic resonant tunnelling through adjacent localised electronic states in van der Waals heterostructuresE. E. Vdovin0K. Kapralov1Yu. N. Khanin2A. Margaryan3K. Watanabe4T. Taniguchi5C. Yang6S. V. Morozov7D. A. Svintsov8K. S. Novoselov9D. A. Ghazaryan10Institute of Microelectronics Technology RASCenter for Photonics and 2D Materials, Moscow Institute of Physics and TechnologyInstitute of Microelectronics Technology RASLaboratory of Advanced Functional Materials, Yerevan State UniversityNational Institute for Materials ScienceNational Institute for Materials ScienceState Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen UniversityInstitute of Microelectronics Technology RASCenter for Photonics and 2D Materials, Moscow Institute of Physics and TechnologyInstitute for Functional Intelligent Materials, National University of SingaporeLaboratory of Advanced Functional Materials, Yerevan State UniversityAbstract Van der Waals heterostructures offer unprecedented opportunities to design next stage functional electronic 2D devices. Most architectures of those devices incorporate large bandgap insulator – hBN as an encapsulating or tunnel barrier layers. Here, we use an architecture of gated vertical tunnelling transistors to study a generic phenomenon of electron resonant tunnelling through adjacent localised electronic states in hBN barriers. We demonstrate that in the case of two localised electronic states, the tunnelling can be of inelastic nature giving rise to explicitly strong resonant features. It allows accurate tunnelling spectroscopy of delicate features of emitting and collecting layer electronic density of states, such as second neutrality point bandgap of moiré monolayer and electric field induced bandgap of Bernal bilayer graphene. Our findings enrich the perception of interaction mechanisms among the localised electronic states in hBN barriers paving the way for future explorations into their applications.https://doi.org/10.1038/s41699-025-00528-6 |
| spellingShingle | E. E. Vdovin K. Kapralov Yu. N. Khanin A. Margaryan K. Watanabe T. Taniguchi C. Yang S. V. Morozov D. A. Svintsov K. S. Novoselov D. A. Ghazaryan Inelastic resonant tunnelling through adjacent localised electronic states in van der Waals heterostructures npj 2D Materials and Applications |
| title | Inelastic resonant tunnelling through adjacent localised electronic states in van der Waals heterostructures |
| title_full | Inelastic resonant tunnelling through adjacent localised electronic states in van der Waals heterostructures |
| title_fullStr | Inelastic resonant tunnelling through adjacent localised electronic states in van der Waals heterostructures |
| title_full_unstemmed | Inelastic resonant tunnelling through adjacent localised electronic states in van der Waals heterostructures |
| title_short | Inelastic resonant tunnelling through adjacent localised electronic states in van der Waals heterostructures |
| title_sort | inelastic resonant tunnelling through adjacent localised electronic states in van der waals heterostructures |
| url | https://doi.org/10.1038/s41699-025-00528-6 |
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