Impact of Split Gate in a Novel SOI MOSFET (SPG SOI) for Reduction of Short-Channel Effects: Analytical Modeling and Simulation
In this paper a comprehensive investigation of a novel device called split-gate silicon-on-insulator MOSFET (SPG SOI MOSFET) is proposed to reduce short-channel effects (SCEs). Studying the device has been done by analytical approach and simulation. In the proposed structure the gate is split into t...
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| Format: | Article |
| Language: | English |
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Wiley
2013-01-01
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| Series: | Journal of Engineering |
| Online Access: | http://dx.doi.org/10.1155/2013/307451 |
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| author | Mohammad K. Anvarifard Ali A. Orouji |
| author_facet | Mohammad K. Anvarifard Ali A. Orouji |
| author_sort | Mohammad K. Anvarifard |
| collection | DOAJ |
| description | In this paper a comprehensive investigation of a novel device called split-gate silicon-on-insulator MOSFET (SPG SOI MOSFET) is proposed to reduce short-channel effects (SCEs). Studying the device has been done by analytical approach and simulation. In the proposed structure the gate is split into two parts. A voltage difference exists between the two parts. It is demonstrated that the surface potential in the channel region exhibits a step function. Some improvements are obtained on parameters such as SCEs, hot-carrier effect (HCE), and drain-induced barrier lowering (DIBL). The accuracy of the results obtained by use of the analytical model is verified by ATLAS device simulation software. The obtained results of the model are compared with those of the single-gate (SG) SOI MOSFET. The simulation results show that the SPG SOI MOSFET performance is superior. |
| format | Article |
| id | doaj-art-d45691011f514f20b539980f20618ee2 |
| institution | Kabale University |
| issn | 2314-4904 2314-4912 |
| language | English |
| publishDate | 2013-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Journal of Engineering |
| spelling | doaj-art-d45691011f514f20b539980f20618ee22025-02-03T06:41:58ZengWileyJournal of Engineering2314-49042314-49122013-01-01201310.1155/2013/307451307451Impact of Split Gate in a Novel SOI MOSFET (SPG SOI) for Reduction of Short-Channel Effects: Analytical Modeling and SimulationMohammad K. Anvarifard0Ali A. Orouji1Electrical Engineering Department, Semnan University, Semnan, IranElectrical Engineering Department, Semnan University, Semnan, IranIn this paper a comprehensive investigation of a novel device called split-gate silicon-on-insulator MOSFET (SPG SOI MOSFET) is proposed to reduce short-channel effects (SCEs). Studying the device has been done by analytical approach and simulation. In the proposed structure the gate is split into two parts. A voltage difference exists between the two parts. It is demonstrated that the surface potential in the channel region exhibits a step function. Some improvements are obtained on parameters such as SCEs, hot-carrier effect (HCE), and drain-induced barrier lowering (DIBL). The accuracy of the results obtained by use of the analytical model is verified by ATLAS device simulation software. The obtained results of the model are compared with those of the single-gate (SG) SOI MOSFET. The simulation results show that the SPG SOI MOSFET performance is superior.http://dx.doi.org/10.1155/2013/307451 |
| spellingShingle | Mohammad K. Anvarifard Ali A. Orouji Impact of Split Gate in a Novel SOI MOSFET (SPG SOI) for Reduction of Short-Channel Effects: Analytical Modeling and Simulation Journal of Engineering |
| title | Impact of Split Gate in a Novel SOI MOSFET (SPG SOI) for Reduction of Short-Channel Effects: Analytical Modeling and Simulation |
| title_full | Impact of Split Gate in a Novel SOI MOSFET (SPG SOI) for Reduction of Short-Channel Effects: Analytical Modeling and Simulation |
| title_fullStr | Impact of Split Gate in a Novel SOI MOSFET (SPG SOI) for Reduction of Short-Channel Effects: Analytical Modeling and Simulation |
| title_full_unstemmed | Impact of Split Gate in a Novel SOI MOSFET (SPG SOI) for Reduction of Short-Channel Effects: Analytical Modeling and Simulation |
| title_short | Impact of Split Gate in a Novel SOI MOSFET (SPG SOI) for Reduction of Short-Channel Effects: Analytical Modeling and Simulation |
| title_sort | impact of split gate in a novel soi mosfet spg soi for reduction of short channel effects analytical modeling and simulation |
| url | http://dx.doi.org/10.1155/2013/307451 |
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