Solid‐Solution Limits and Thorough Characterization of Bulk β‐(AlxGa1‐x)2O Single Crystals Grown by the Czochralski Method
Abstract With comprehensive crystal growth experiments of β‐(AlxGa1‐x)2O3 by the Czochralski method this work concludes a maximum [Al] = 40 mol% (35 mol% in the melt) that can be incorporated into β‐Ga2O3 crystal lattice while keeping single crystalline and monoclinic phase, resulting in the formula...
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Wiley-VCH
2025-01-01
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| Series: | Advanced Materials Interfaces |
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| Online Access: | https://doi.org/10.1002/admi.202400122 |
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| author | Zbigniew Galazka Andreas Fiedler Andreas Popp Palvan Seyidov Saud Bin Anooz Roberts Blukis Jana Rehm Kornelius Tetzner Mike Pietsch Andrea Dittmar Steffen Ganschow Arub Akhtar Thilo Remmele Martin Albrecht Tobias Schulz Ta‐Shun Chou Albert Kwasniewski Manuela Suendermann Thomas Schroeder Matthias Bickermann |
| author_facet | Zbigniew Galazka Andreas Fiedler Andreas Popp Palvan Seyidov Saud Bin Anooz Roberts Blukis Jana Rehm Kornelius Tetzner Mike Pietsch Andrea Dittmar Steffen Ganschow Arub Akhtar Thilo Remmele Martin Albrecht Tobias Schulz Ta‐Shun Chou Albert Kwasniewski Manuela Suendermann Thomas Schroeder Matthias Bickermann |
| author_sort | Zbigniew Galazka |
| collection | DOAJ |
| description | Abstract With comprehensive crystal growth experiments of β‐(AlxGa1‐x)2O3 by the Czochralski method this work concludes a maximum [Al] = 40 mol% (35 mol% in the melt) that can be incorporated into β‐Ga2O3 crystal lattice while keeping single crystalline and monoclinic phase, resulting in the formula of β‐(Al0.4Ga0.6)2O3. Transmission Electron Microscopy (TEM) analysis reveals random distribution of Al across both octahedral and tetrahedral sites. This work has shown, that incorporation of only [Ga] ≥ 5 mol% into α‐Al2O3 crystals leads to a phase separation of (α + θ)‐Al2O3. With electrical measurements this work proves an increase of the electrical resistivity of β‐(AlxGa1‐x)2O3:Mg as compared to β‐Ga2O3:Mg. The static dielectric constant and refractive index both decrease with [Al]. Raman spectra shows a continuous shift and broadening of the peaks, with the low energy optical phonons Ag(3) having a large contribution to a decrease in the electron mobility. Further, Ir incorporation into the crystals decreases with [Al], wherein Ir4+ Raman peak disappears already at [Al] ≥ 15 mol%. Finally, thermal conductivity measurements on β‐(AlxGa1‐x)2O3 crystals show a drastic decrease of its values with [Al], to about 1/3 of the β‐Ga2O3 value at [Al] = 30 mol%. |
| format | Article |
| id | doaj-art-d416251160824eb5bb7ae653d91d16bb |
| institution | Kabale University |
| issn | 2196-7350 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj-art-d416251160824eb5bb7ae653d91d16bb2025-01-20T13:56:18ZengWiley-VCHAdvanced Materials Interfaces2196-73502025-01-01122n/an/a10.1002/admi.202400122Solid‐Solution Limits and Thorough Characterization of Bulk β‐(AlxGa1‐x)2O Single Crystals Grown by the Czochralski MethodZbigniew Galazka0Andreas Fiedler1Andreas Popp2Palvan Seyidov3Saud Bin Anooz4Roberts Blukis5Jana Rehm6Kornelius Tetzner7Mike Pietsch8Andrea Dittmar9Steffen Ganschow10Arub Akhtar11Thilo Remmele12Martin Albrecht13Tobias Schulz14Ta‐Shun Chou15Albert Kwasniewski16Manuela Suendermann17Thomas Schroeder18Matthias Bickermann19Leibniz‐Institut für Kristallzüchtung Max‐Born‐Str. 2 12489 Berlin GermanyLeibniz‐Institut für Kristallzüchtung Max‐Born‐Str. 2 12489 Berlin GermanyLeibniz‐Institut für Kristallzüchtung Max‐Born‐Str. 2 12489 Berlin GermanyLeibniz‐Institut für Kristallzüchtung Max‐Born‐Str. 2 12489 Berlin GermanyLeibniz‐Institut für Kristallzüchtung Max‐Born‐Str. 2 12489 Berlin GermanyLeibniz‐Institut für Kristallzüchtung Max‐Born‐Str. 2 12489 Berlin GermanyLeibniz‐Institut für Kristallzüchtung Max‐Born‐Str. 2 12489 Berlin GermanyFerdinand‐Braun‐Institut Leibniz‐Institut für Höchstfrequenztechnik Gustav‐Kirchhoff‐Straße 4 12489 Berlin GermanyLeibniz‐Institut für Kristallzüchtung Max‐Born‐Str. 2 12489 Berlin GermanyLeibniz‐Institut für Kristallzüchtung Max‐Born‐Str. 2 12489 Berlin GermanyLeibniz‐Institut für Kristallzüchtung Max‐Born‐Str. 2 12489 Berlin GermanyLeibniz‐Institut für Kristallzüchtung Max‐Born‐Str. 2 12489 Berlin GermanyLeibniz‐Institut für Kristallzüchtung Max‐Born‐Str. 2 12489 Berlin GermanyLeibniz‐Institut für Kristallzüchtung Max‐Born‐Str. 2 12489 Berlin GermanyLeibniz‐Institut für Kristallzüchtung Max‐Born‐Str. 2 12489 Berlin GermanyLeibniz‐Institut für Kristallzüchtung Max‐Born‐Str. 2 12489 Berlin GermanyLeibniz‐Institut für Kristallzüchtung Max‐Born‐Str. 2 12489 Berlin GermanyLeibniz‐Institut für Kristallzüchtung Max‐Born‐Str. 2 12489 Berlin GermanyLeibniz‐Institut für Kristallzüchtung Max‐Born‐Str. 2 12489 Berlin GermanyLeibniz‐Institut für Kristallzüchtung Max‐Born‐Str. 2 12489 Berlin GermanyAbstract With comprehensive crystal growth experiments of β‐(AlxGa1‐x)2O3 by the Czochralski method this work concludes a maximum [Al] = 40 mol% (35 mol% in the melt) that can be incorporated into β‐Ga2O3 crystal lattice while keeping single crystalline and monoclinic phase, resulting in the formula of β‐(Al0.4Ga0.6)2O3. Transmission Electron Microscopy (TEM) analysis reveals random distribution of Al across both octahedral and tetrahedral sites. This work has shown, that incorporation of only [Ga] ≥ 5 mol% into α‐Al2O3 crystals leads to a phase separation of (α + θ)‐Al2O3. With electrical measurements this work proves an increase of the electrical resistivity of β‐(AlxGa1‐x)2O3:Mg as compared to β‐Ga2O3:Mg. The static dielectric constant and refractive index both decrease with [Al]. Raman spectra shows a continuous shift and broadening of the peaks, with the low energy optical phonons Ag(3) having a large contribution to a decrease in the electron mobility. Further, Ir incorporation into the crystals decreases with [Al], wherein Ir4+ Raman peak disappears already at [Al] ≥ 15 mol%. Finally, thermal conductivity measurements on β‐(AlxGa1‐x)2O3 crystals show a drastic decrease of its values with [Al], to about 1/3 of the β‐Ga2O3 value at [Al] = 30 mol%.https://doi.org/10.1002/admi.202400122bulk Î2‐(AlxGa1‐x)2O3 single crystalCzochralski methoddopingphysical propertieswafers |
| spellingShingle | Zbigniew Galazka Andreas Fiedler Andreas Popp Palvan Seyidov Saud Bin Anooz Roberts Blukis Jana Rehm Kornelius Tetzner Mike Pietsch Andrea Dittmar Steffen Ganschow Arub Akhtar Thilo Remmele Martin Albrecht Tobias Schulz Ta‐Shun Chou Albert Kwasniewski Manuela Suendermann Thomas Schroeder Matthias Bickermann Solid‐Solution Limits and Thorough Characterization of Bulk β‐(AlxGa1‐x)2O Single Crystals Grown by the Czochralski Method Advanced Materials Interfaces bulk Î2‐(AlxGa1‐x)2O3 single crystal Czochralski method doping physical properties wafers |
| title | Solid‐Solution Limits and Thorough Characterization of Bulk β‐(AlxGa1‐x)2O Single Crystals Grown by the Czochralski Method |
| title_full | Solid‐Solution Limits and Thorough Characterization of Bulk β‐(AlxGa1‐x)2O Single Crystals Grown by the Czochralski Method |
| title_fullStr | Solid‐Solution Limits and Thorough Characterization of Bulk β‐(AlxGa1‐x)2O Single Crystals Grown by the Czochralski Method |
| title_full_unstemmed | Solid‐Solution Limits and Thorough Characterization of Bulk β‐(AlxGa1‐x)2O Single Crystals Grown by the Czochralski Method |
| title_short | Solid‐Solution Limits and Thorough Characterization of Bulk β‐(AlxGa1‐x)2O Single Crystals Grown by the Czochralski Method |
| title_sort | solid solution limits and thorough characterization of bulk β alxga1 x 2o single crystals grown by the czochralski method |
| topic | bulk Î2‐(AlxGa1‐x)2O3 single crystal Czochralski method doping physical properties wafers |
| url | https://doi.org/10.1002/admi.202400122 |
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