Grains, grain boundaries in single and few layer MoS2
This study investigates the chemical vapour deposition (CVD) of molybdenum disulfide (MoS _2 ) on SiO _2 , examining the formation of various grains and grain boundaries (GBs) in single- to few-layer MoS _2 . The material, optical, and electronic properties of the resulting MoS _2 were evaluated thr...
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| Format: | Article |
| Language: | English |
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IOP Publishing
2025-01-01
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| Series: | Nano Express |
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| Online Access: | https://doi.org/10.1088/2632-959X/ade9e4 |
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| author | Sobin Mathew Vladislav Kurtash Bernd Hähnlein Pavithra Manoharan Mithun Krishna Heiko O Jacobs Jörg Pezoldt |
| author_facet | Sobin Mathew Vladislav Kurtash Bernd Hähnlein Pavithra Manoharan Mithun Krishna Heiko O Jacobs Jörg Pezoldt |
| author_sort | Sobin Mathew |
| collection | DOAJ |
| description | This study investigates the chemical vapour deposition (CVD) of molybdenum disulfide (MoS _2 ) on SiO _2 , examining the formation of various grains and grain boundaries (GBs) in single- to few-layer MoS _2 . The material, optical, and electronic properties of the resulting MoS _2 were evaluated through Raman and photoluminescence (PL) spectroscopy. Notably, both Raman and photoluminescence intensities were quenched at the GBs. Moreover, a consistent redshift in the photoluminescence peak positions at the grain boundaries indicating local strain or defect-induced modifications. Electrical characterization of lateral 2-terminal backgated devices on individual grains exhibited lower carrier mobility than those fabricated on continuous few-layers MoS _2 , with the highest measured mobility reaching 18.6 cm ^2 V ^−1 s ^−1 . Additionally, the back-gated field effect transistors (FET) on individual grains and continuous fewlayered showed pronounced clockwise hysteresis in their transfer characteristics, revealing the distinctive contribution of MoS _2 surface and MoS _2 /SiO _2 interface defects and their associated traps-as primary sources of hysteresis. |
| format | Article |
| id | doaj-art-d3184e1cd85c4e92b897eddea2baf39e |
| institution | Kabale University |
| issn | 2632-959X |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Nano Express |
| spelling | doaj-art-d3184e1cd85c4e92b897eddea2baf39e2025-08-20T03:28:17ZengIOP PublishingNano Express2632-959X2025-01-016303500510.1088/2632-959X/ade9e4Grains, grain boundaries in single and few layer MoS2Sobin Mathew0https://orcid.org/0000-0002-4941-7961Vladislav Kurtash1Bernd Hähnlein2https://orcid.org/0000-0002-1704-7476Pavithra Manoharan3Mithun Krishna4Heiko O Jacobs5https://orcid.org/0000-0001-6335-8729Jörg Pezoldt6https://orcid.org/0000-0002-2611-7720FG-Nanotechnologie, Institut für Mikro- und Nanoelektronik and Institut für Mikro- und Nanotechnologien MacroNano® and Institut für Werstofftechnik, Technische Universität Ilmenau , GermanyFG-Nanotechnologie, Institut für Mikro- und Nanoelektronik and Institut für Mikro- und Nanotechnologien MacroNano® and Institut für Werstofftechnik, Technische Universität Ilmenau , GermanyFG Technische Physik I, Institut für Physik, Technische Universität Ilmenau , GermanyFG-Nanotechnologie, Institut für Mikro- und Nanoelektronik and Institut für Mikro- und Nanotechnologien MacroNano® and Institut für Werstofftechnik, Technische Universität Ilmenau , GermanyFG-Nanotechnologie, Institut für Mikro- und Nanoelektronik and Institut für Mikro- und Nanotechnologien MacroNano® and Institut für Werstofftechnik, Technische Universität Ilmenau , GermanyFG-Nanotechnologie, Institut für Mikro- und Nanoelektronik and Institut für Mikro- und Nanotechnologien MacroNano® and Institut für Werstofftechnik, Technische Universität Ilmenau , GermanyFG-Nanotechnologie, Institut für Mikro- und Nanoelektronik and Institut für Mikro- und Nanotechnologien MacroNano® and Institut für Werstofftechnik, Technische Universität Ilmenau , GermanyThis study investigates the chemical vapour deposition (CVD) of molybdenum disulfide (MoS _2 ) on SiO _2 , examining the formation of various grains and grain boundaries (GBs) in single- to few-layer MoS _2 . The material, optical, and electronic properties of the resulting MoS _2 were evaluated through Raman and photoluminescence (PL) spectroscopy. Notably, both Raman and photoluminescence intensities were quenched at the GBs. Moreover, a consistent redshift in the photoluminescence peak positions at the grain boundaries indicating local strain or defect-induced modifications. Electrical characterization of lateral 2-terminal backgated devices on individual grains exhibited lower carrier mobility than those fabricated on continuous few-layers MoS _2 , with the highest measured mobility reaching 18.6 cm ^2 V ^−1 s ^−1 . Additionally, the back-gated field effect transistors (FET) on individual grains and continuous fewlayered showed pronounced clockwise hysteresis in their transfer characteristics, revealing the distinctive contribution of MoS _2 surface and MoS _2 /SiO _2 interface defects and their associated traps-as primary sources of hysteresis.https://doi.org/10.1088/2632-959X/ade9e4molybdenum disulfidegrain boundariesRaman mappingphotoluminescencehysteresis areacharge trapping |
| spellingShingle | Sobin Mathew Vladislav Kurtash Bernd Hähnlein Pavithra Manoharan Mithun Krishna Heiko O Jacobs Jörg Pezoldt Grains, grain boundaries in single and few layer MoS2 Nano Express molybdenum disulfide grain boundaries Raman mapping photoluminescence hysteresis area charge trapping |
| title | Grains, grain boundaries in single and few layer MoS2 |
| title_full | Grains, grain boundaries in single and few layer MoS2 |
| title_fullStr | Grains, grain boundaries in single and few layer MoS2 |
| title_full_unstemmed | Grains, grain boundaries in single and few layer MoS2 |
| title_short | Grains, grain boundaries in single and few layer MoS2 |
| title_sort | grains grain boundaries in single and few layer mos2 |
| topic | molybdenum disulfide grain boundaries Raman mapping photoluminescence hysteresis area charge trapping |
| url | https://doi.org/10.1088/2632-959X/ade9e4 |
| work_keys_str_mv | AT sobinmathew grainsgrainboundariesinsingleandfewlayermos2 AT vladislavkurtash grainsgrainboundariesinsingleandfewlayermos2 AT berndhahnlein grainsgrainboundariesinsingleandfewlayermos2 AT pavithramanoharan grainsgrainboundariesinsingleandfewlayermos2 AT mithunkrishna grainsgrainboundariesinsingleandfewlayermos2 AT heikoojacobs grainsgrainboundariesinsingleandfewlayermos2 AT jorgpezoldt grainsgrainboundariesinsingleandfewlayermos2 |