Uncovering the influence of nitridation on the dislocation density at atomistic scale in III-Nitrides MOCVD/MOVPE epitaxy process
Abstract The impact of NH3 pre-flow duration on the strain development of AlN and its alloy buffer layers, as well as GaN layers, was reproduced through atomistic simulation. The reported method provides access to information that is not obvious from the raw data alone. The growth morphology of AlN...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-04-01
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| Series: | Scientific Reports |
| Subjects: | |
| Online Access: | https://doi.org/10.1038/s41598-025-89681-y |
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