Annealing Effects on GaAs/Ge Solar Cell after 150 keV Proton Irradiation

Radiation-induced defects are responsible for solar cell degradation. The effects of radiation and annealing on the defects of a GaAs/Ge solar cell are modeled and analyzed in this paper. The electrical performance and spectral response of solar cells irradiated with 150 keV proton are examined. The...

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Main Authors: Meihua Fang, Tao Fei, Mengying Bai, Yipan Guo, Jingpeng Lv, Ronghui Quan, Hongbo Lu, Huiping Liu
Format: Article
Language:English
Published: Wiley 2020-01-01
Series:International Journal of Photoenergy
Online Access:http://dx.doi.org/10.1155/2020/3082835
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_version_ 1832566162916900864
author Meihua Fang
Tao Fei
Mengying Bai
Yipan Guo
Jingpeng Lv
Ronghui Quan
Hongbo Lu
Huiping Liu
author_facet Meihua Fang
Tao Fei
Mengying Bai
Yipan Guo
Jingpeng Lv
Ronghui Quan
Hongbo Lu
Huiping Liu
author_sort Meihua Fang
collection DOAJ
description Radiation-induced defects are responsible for solar cell degradation. The effects of radiation and annealing on the defects of a GaAs/Ge solar cell are modeled and analyzed in this paper. The electrical performance and spectral response of solar cells irradiated with 150 keV proton are examined. Then, thermal annealing was carried out at 120°C. We found that the proportion of defect recovery after annealing decreases with increasing irradiation fluence. The minority carrier lifetime increases with decreasing defect concentration, which means that the electrical performance of the solar cell is improved. We calculated the defect concentration and minority carrier lifetime with numerical simulation and modeled an improved annealing kinetic equation with experimental results.
format Article
id doaj-art-d2cdb49a0e6d423e94f2af4743f95939
institution Kabale University
issn 1110-662X
1687-529X
language English
publishDate 2020-01-01
publisher Wiley
record_format Article
series International Journal of Photoenergy
spelling doaj-art-d2cdb49a0e6d423e94f2af4743f959392025-02-03T01:05:01ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2020-01-01202010.1155/2020/30828353082835Annealing Effects on GaAs/Ge Solar Cell after 150 keV Proton IrradiationMeihua Fang0Tao Fei1Mengying Bai2Yipan Guo3Jingpeng Lv4Ronghui Quan5Hongbo Lu6Huiping Liu7Nanjing University of Aeronautics and Astronautics, Nanjing 210016, ChinaNanjing University of Aeronautics and Astronautics, Nanjing 210016, ChinaNanjing University of Aeronautics and Astronautics, Nanjing 210016, ChinaNanjing University of Aeronautics and Astronautics, Nanjing 210016, ChinaNanjing University of Aeronautics and Astronautics, Nanjing 210016, ChinaNanjing University of Aeronautics and Astronautics, Nanjing 210016, ChinaState Key Laboratory of Space Power-Sources, Shanghai Institute of Space Power-Sources, Shanghai 200245, ChinaInstitute of Modern Physics, Chinese Academy of Sciences, Lanzhou, Gansu 730000, ChinaRadiation-induced defects are responsible for solar cell degradation. The effects of radiation and annealing on the defects of a GaAs/Ge solar cell are modeled and analyzed in this paper. The electrical performance and spectral response of solar cells irradiated with 150 keV proton are examined. Then, thermal annealing was carried out at 120°C. We found that the proportion of defect recovery after annealing decreases with increasing irradiation fluence. The minority carrier lifetime increases with decreasing defect concentration, which means that the electrical performance of the solar cell is improved. We calculated the defect concentration and minority carrier lifetime with numerical simulation and modeled an improved annealing kinetic equation with experimental results.http://dx.doi.org/10.1155/2020/3082835
spellingShingle Meihua Fang
Tao Fei
Mengying Bai
Yipan Guo
Jingpeng Lv
Ronghui Quan
Hongbo Lu
Huiping Liu
Annealing Effects on GaAs/Ge Solar Cell after 150 keV Proton Irradiation
International Journal of Photoenergy
title Annealing Effects on GaAs/Ge Solar Cell after 150 keV Proton Irradiation
title_full Annealing Effects on GaAs/Ge Solar Cell after 150 keV Proton Irradiation
title_fullStr Annealing Effects on GaAs/Ge Solar Cell after 150 keV Proton Irradiation
title_full_unstemmed Annealing Effects on GaAs/Ge Solar Cell after 150 keV Proton Irradiation
title_short Annealing Effects on GaAs/Ge Solar Cell after 150 keV Proton Irradiation
title_sort annealing effects on gaas ge solar cell after 150 kev proton irradiation
url http://dx.doi.org/10.1155/2020/3082835
work_keys_str_mv AT meihuafang annealingeffectsongaasgesolarcellafter150kevprotonirradiation
AT taofei annealingeffectsongaasgesolarcellafter150kevprotonirradiation
AT mengyingbai annealingeffectsongaasgesolarcellafter150kevprotonirradiation
AT yipanguo annealingeffectsongaasgesolarcellafter150kevprotonirradiation
AT jingpenglv annealingeffectsongaasgesolarcellafter150kevprotonirradiation
AT ronghuiquan annealingeffectsongaasgesolarcellafter150kevprotonirradiation
AT hongbolu annealingeffectsongaasgesolarcellafter150kevprotonirradiation
AT huipingliu annealingeffectsongaasgesolarcellafter150kevprotonirradiation