Annealing Effects on GaAs/Ge Solar Cell after 150 keV Proton Irradiation
Radiation-induced defects are responsible for solar cell degradation. The effects of radiation and annealing on the defects of a GaAs/Ge solar cell are modeled and analyzed in this paper. The electrical performance and spectral response of solar cells irradiated with 150 keV proton are examined. The...
Saved in:
Main Authors: | , , , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
Wiley
2020-01-01
|
Series: | International Journal of Photoenergy |
Online Access: | http://dx.doi.org/10.1155/2020/3082835 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
_version_ | 1832566162916900864 |
---|---|
author | Meihua Fang Tao Fei Mengying Bai Yipan Guo Jingpeng Lv Ronghui Quan Hongbo Lu Huiping Liu |
author_facet | Meihua Fang Tao Fei Mengying Bai Yipan Guo Jingpeng Lv Ronghui Quan Hongbo Lu Huiping Liu |
author_sort | Meihua Fang |
collection | DOAJ |
description | Radiation-induced defects are responsible for solar cell degradation. The effects of radiation and annealing on the defects of a GaAs/Ge solar cell are modeled and analyzed in this paper. The electrical performance and spectral response of solar cells irradiated with 150 keV proton are examined. Then, thermal annealing was carried out at 120°C. We found that the proportion of defect recovery after annealing decreases with increasing irradiation fluence. The minority carrier lifetime increases with decreasing defect concentration, which means that the electrical performance of the solar cell is improved. We calculated the defect concentration and minority carrier lifetime with numerical simulation and modeled an improved annealing kinetic equation with experimental results. |
format | Article |
id | doaj-art-d2cdb49a0e6d423e94f2af4743f95939 |
institution | Kabale University |
issn | 1110-662X 1687-529X |
language | English |
publishDate | 2020-01-01 |
publisher | Wiley |
record_format | Article |
series | International Journal of Photoenergy |
spelling | doaj-art-d2cdb49a0e6d423e94f2af4743f959392025-02-03T01:05:01ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2020-01-01202010.1155/2020/30828353082835Annealing Effects on GaAs/Ge Solar Cell after 150 keV Proton IrradiationMeihua Fang0Tao Fei1Mengying Bai2Yipan Guo3Jingpeng Lv4Ronghui Quan5Hongbo Lu6Huiping Liu7Nanjing University of Aeronautics and Astronautics, Nanjing 210016, ChinaNanjing University of Aeronautics and Astronautics, Nanjing 210016, ChinaNanjing University of Aeronautics and Astronautics, Nanjing 210016, ChinaNanjing University of Aeronautics and Astronautics, Nanjing 210016, ChinaNanjing University of Aeronautics and Astronautics, Nanjing 210016, ChinaNanjing University of Aeronautics and Astronautics, Nanjing 210016, ChinaState Key Laboratory of Space Power-Sources, Shanghai Institute of Space Power-Sources, Shanghai 200245, ChinaInstitute of Modern Physics, Chinese Academy of Sciences, Lanzhou, Gansu 730000, ChinaRadiation-induced defects are responsible for solar cell degradation. The effects of radiation and annealing on the defects of a GaAs/Ge solar cell are modeled and analyzed in this paper. The electrical performance and spectral response of solar cells irradiated with 150 keV proton are examined. Then, thermal annealing was carried out at 120°C. We found that the proportion of defect recovery after annealing decreases with increasing irradiation fluence. The minority carrier lifetime increases with decreasing defect concentration, which means that the electrical performance of the solar cell is improved. We calculated the defect concentration and minority carrier lifetime with numerical simulation and modeled an improved annealing kinetic equation with experimental results.http://dx.doi.org/10.1155/2020/3082835 |
spellingShingle | Meihua Fang Tao Fei Mengying Bai Yipan Guo Jingpeng Lv Ronghui Quan Hongbo Lu Huiping Liu Annealing Effects on GaAs/Ge Solar Cell after 150 keV Proton Irradiation International Journal of Photoenergy |
title | Annealing Effects on GaAs/Ge Solar Cell after 150 keV Proton Irradiation |
title_full | Annealing Effects on GaAs/Ge Solar Cell after 150 keV Proton Irradiation |
title_fullStr | Annealing Effects on GaAs/Ge Solar Cell after 150 keV Proton Irradiation |
title_full_unstemmed | Annealing Effects on GaAs/Ge Solar Cell after 150 keV Proton Irradiation |
title_short | Annealing Effects on GaAs/Ge Solar Cell after 150 keV Proton Irradiation |
title_sort | annealing effects on gaas ge solar cell after 150 kev proton irradiation |
url | http://dx.doi.org/10.1155/2020/3082835 |
work_keys_str_mv | AT meihuafang annealingeffectsongaasgesolarcellafter150kevprotonirradiation AT taofei annealingeffectsongaasgesolarcellafter150kevprotonirradiation AT mengyingbai annealingeffectsongaasgesolarcellafter150kevprotonirradiation AT yipanguo annealingeffectsongaasgesolarcellafter150kevprotonirradiation AT jingpenglv annealingeffectsongaasgesolarcellafter150kevprotonirradiation AT ronghuiquan annealingeffectsongaasgesolarcellafter150kevprotonirradiation AT hongbolu annealingeffectsongaasgesolarcellafter150kevprotonirradiation AT huipingliu annealingeffectsongaasgesolarcellafter150kevprotonirradiation |