Memristive Ferroelectric FET for 1T-1R Nonvolatile Memory With Non-Destructive Readout
Energy-efficient non-volatile memory that supports non-destructive read capabilities is in high demand for random-access memory applications. This article presents the proposal and demonstration of a 1T-1R non-volatile memory cell, which has distinct read and write paths that utilize a memristive va...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Open Journal of Nanotechnology |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10845186/ |
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