Memristive Ferroelectric FET for 1T-1R Nonvolatile Memory With Non-Destructive Readout
Energy-efficient non-volatile memory that supports non-destructive read capabilities is in high demand for random-access memory applications. This article presents the proposal and demonstration of a 1T-1R non-volatile memory cell, which has distinct read and write paths that utilize a memristive va...
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IEEE
2025-01-01
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| Series: | IEEE Open Journal of Nanotechnology |
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| Online Access: | https://ieeexplore.ieee.org/document/10845186/ |
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| author | Roopesh Singh Shivam Verma |
| author_facet | Roopesh Singh Shivam Verma |
| author_sort | Roopesh Singh |
| collection | DOAJ |
| description | Energy-efficient non-volatile memory that supports non-destructive read capabilities is in high demand for random-access memory applications. This article presents the proposal and demonstration of a 1T-1R non-volatile memory cell, which has distinct read and write paths that utilize a memristive variant of the ferroelectric field effect transistor (MFeFET) for data storage. Through a combination of experimentally calibrated models and TCAD-based mixed-mode simulations, the proposed MFeFET-based memory cell is demonstrated to achieve a non-destructive read operation and higher read current at low operating voltages. Furthermore, the memory cell demonstrates a 50% reduction in read latency compared to spin transfer torque (STT) magneto-resistive random-access memory (MRAM) technologies, positioning it as a highly efficient solution for next-generation non-volatile memory applications. |
| format | Article |
| id | doaj-art-d1addcab1886427f9660354310aeeb09 |
| institution | Kabale University |
| issn | 2644-1292 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Open Journal of Nanotechnology |
| spelling | doaj-art-d1addcab1886427f9660354310aeeb092025-02-05T00:01:21ZengIEEEIEEE Open Journal of Nanotechnology2644-12922025-01-016273410.1109/OJNANO.2025.353175910845186Memristive Ferroelectric FET for 1T-1R Nonvolatile Memory With Non-Destructive ReadoutRoopesh Singh0https://orcid.org/0000-0003-0641-2914Shivam Verma1https://orcid.org/0000-0002-4757-3725Department of Electronics Engineering, Indian Institute of Technology (BHU), Varanasi, IndiaDepartment of Electronics Engineering, Indian Institute of Technology (BHU), Varanasi, IndiaEnergy-efficient non-volatile memory that supports non-destructive read capabilities is in high demand for random-access memory applications. This article presents the proposal and demonstration of a 1T-1R non-volatile memory cell, which has distinct read and write paths that utilize a memristive variant of the ferroelectric field effect transistor (MFeFET) for data storage. Through a combination of experimentally calibrated models and TCAD-based mixed-mode simulations, the proposed MFeFET-based memory cell is demonstrated to achieve a non-destructive read operation and higher read current at low operating voltages. Furthermore, the memory cell demonstrates a 50% reduction in read latency compared to spin transfer torque (STT) magneto-resistive random-access memory (MRAM) technologies, positioning it as a highly efficient solution for next-generation non-volatile memory applications.https://ieeexplore.ieee.org/document/10845186/Fin field effect transistor (FinFET)ferroelectric field effect transistor (FeFET)magnetic tunnel junction (MTJ)junctionless-accumulation-mode (JAM)ferroelectric random-access memory (FeRAM)spin transfer torque (STT) |
| spellingShingle | Roopesh Singh Shivam Verma Memristive Ferroelectric FET for 1T-1R Nonvolatile Memory With Non-Destructive Readout IEEE Open Journal of Nanotechnology Fin field effect transistor (FinFET) ferroelectric field effect transistor (FeFET) magnetic tunnel junction (MTJ) junctionless-accumulation-mode (JAM) ferroelectric random-access memory (FeRAM) spin transfer torque (STT) |
| title | Memristive Ferroelectric FET for 1T-1R Nonvolatile Memory With Non-Destructive Readout |
| title_full | Memristive Ferroelectric FET for 1T-1R Nonvolatile Memory With Non-Destructive Readout |
| title_fullStr | Memristive Ferroelectric FET for 1T-1R Nonvolatile Memory With Non-Destructive Readout |
| title_full_unstemmed | Memristive Ferroelectric FET for 1T-1R Nonvolatile Memory With Non-Destructive Readout |
| title_short | Memristive Ferroelectric FET for 1T-1R Nonvolatile Memory With Non-Destructive Readout |
| title_sort | memristive ferroelectric fet for 1t 1r nonvolatile memory with non destructive readout |
| topic | Fin field effect transistor (FinFET) ferroelectric field effect transistor (FeFET) magnetic tunnel junction (MTJ) junctionless-accumulation-mode (JAM) ferroelectric random-access memory (FeRAM) spin transfer torque (STT) |
| url | https://ieeexplore.ieee.org/document/10845186/ |
| work_keys_str_mv | AT roopeshsingh memristiveferroelectricfetfor1t1rnonvolatilememorywithnondestructivereadout AT shivamverma memristiveferroelectricfetfor1t1rnonvolatilememorywithnondestructivereadout |