Synthesis and Study of Oxide Semiconductor Nanoheterostructures in SiO<sub>2</sub>/Si Track Template
In this study, chemical deposition was used to synthesize structures of Ga<sub>2</sub>O<sub>3</sub> -NW/SiO<sub>2</sub>/Si (NW—nanowire) at 348 K and SnO<sub>2</sub>-NW/SiO<sub>2</sub>/Si at 323 K in track templates SiO<sub>2</sub&...
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| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-12-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/14/12/1087 |
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| Summary: | In this study, chemical deposition was used to synthesize structures of Ga<sub>2</sub>O<sub>3</sub> -NW/SiO<sub>2</sub>/Si (NW—nanowire) at 348 K and SnO<sub>2</sub>-NW/SiO<sub>2</sub>/Si at 323 K in track templates SiO<sub>2</sub>/Si (either n- or p-type). The resulting crystalline nanowires were δ-Ga<sub>2</sub>O<sub>3</sub> and orthorhombic SnO<sub>2</sub>. Computer modeling of the delta phase of gallium oxide yielded a lattice parameter of a = 9.287 Å, which closely matched the experimental range of 9.83–10.03 Å. The bandgap is indirect with an Eg = 5.5 eV. The photoluminescence spectra of both nanostructures exhibited a complex band when excited by light with λ = 5.16 eV, dominated by luminescence from vacancy-type defects. The current–voltage characteristics of δ-Ga<sub>2</sub>O<sub>3</sub> NW/SiO<sub>2</sub>/Si-p showed one-way conductivity. This structure could be advantageous in devices where a reverse current is undesirable. The p-n junction with a complex structure was formed. This junction consists of a polycrystalline nanowire base exhibiting n-type conductivity and a monocrystalline Si substrate with p-type conductivity. The I–V characteristics of SnO<sub>2</sub>-NW/SiO<sub>2</sub>/Si suggested near-metallic conductivity due to the presence of metallic tin. |
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| ISSN: | 2073-4352 |