Boost in internal quantum efficiency of AlGaN-based deep ultraviolet multiple quantum wells by using multifaceted localization structures
This study demonstrates AlGaN multifaceted multiple quantum wells (MQWs) with a significantly enhanced localized emission, achieved through anisotropic growth control in migration-enhanced metal-organic chemical vapor deposition. By precisely regulating in-plane growth kinetics, pit-free semipolar s...
Saved in:
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
|
| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/adcd1f |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | This study demonstrates AlGaN multifaceted multiple quantum wells (MQWs) with a significantly enhanced localized emission, achieved through anisotropic growth control in migration-enhanced metal-organic chemical vapor deposition. By precisely regulating in-plane growth kinetics, pit-free semipolar sidewalls with tailored microstructures MQWs were obtained, leading to optimized emission properties. Scanning Auger Nanoprobe analysis revealed Ga-rich apex regions within the microfacets, which directly correlated with the enhanced localized emission observed in cathodoluminescence mapping. The multifacet structure exhibits remarkable enhancement in emission intensity through carrier redistribution. A quasi-internal quantum efficiency of 93.9% was achieved, making a significant milestone in the development of semipolar AlGaN MQWs. |
|---|---|
| ISSN: | 1882-0786 |