Spatially Resolved Cathodoluminescence in the Vicinity of Defects in the High-Efficiency InGaN/GaN Blue Light Emitting Diodes
In addition to the standard 447 nm blue emission from the InGaN/GaN multiple quantum wells, a high-energy shoulder is clearly observed in cathodoluminescence spectra of the high-efficiency InGaN/GaN blue light emitting diodes grown on sapphire substrates by metalorganic chemical vapor deposition. Mo...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2014-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2014/671210 |
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