Spatially Resolved Cathodoluminescence in the Vicinity of Defects in the High-Efficiency InGaN/GaN Blue Light Emitting Diodes
In addition to the standard 447 nm blue emission from the InGaN/GaN multiple quantum wells, a high-energy shoulder is clearly observed in cathodoluminescence spectra of the high-efficiency InGaN/GaN blue light emitting diodes grown on sapphire substrates by metalorganic chemical vapor deposition. Mo...
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| Format: | Article |
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Wiley
2014-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2014/671210 |
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| author | Manh-Ha Doan Jaejin Lee |
| author_facet | Manh-Ha Doan Jaejin Lee |
| author_sort | Manh-Ha Doan |
| collection | DOAJ |
| description | In addition to the standard 447 nm blue emission from the InGaN/GaN multiple quantum wells, a high-energy shoulder is clearly observed in cathodoluminescence spectra of the high-efficiency InGaN/GaN blue light emitting diodes grown on sapphire substrates by metalorganic chemical vapor deposition. Monochromatic cathodoluminescence images of the samples measured at low temperature reveal a competition between the two emissions in the vicinity of the dislocations. The high-energy emission is dominant at the regions near the dislocation cores, while the blue emission is enhanced around the dislocation edges. The high-energy emission region is considered as a potential barrier that prevents the carriers for the blue emission from nonradiatively recombining at the dislocations. |
| format | Article |
| id | doaj-art-cf4c21dcc05e49abba34547fa289b07e |
| institution | Kabale University |
| issn | 1687-8108 1687-8124 |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Condensed Matter Physics |
| spelling | doaj-art-cf4c21dcc05e49abba34547fa289b07e2025-02-03T01:01:49ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242014-01-01201410.1155/2014/671210671210Spatially Resolved Cathodoluminescence in the Vicinity of Defects in the High-Efficiency InGaN/GaN Blue Light Emitting DiodesManh-Ha Doan0Jaejin Lee1Department of Electrical and Computer Engineering, Ajou University, Suwon 443-749, Republic of KoreaDepartment of Electrical and Computer Engineering, Ajou University, Suwon 443-749, Republic of KoreaIn addition to the standard 447 nm blue emission from the InGaN/GaN multiple quantum wells, a high-energy shoulder is clearly observed in cathodoluminescence spectra of the high-efficiency InGaN/GaN blue light emitting diodes grown on sapphire substrates by metalorganic chemical vapor deposition. Monochromatic cathodoluminescence images of the samples measured at low temperature reveal a competition between the two emissions in the vicinity of the dislocations. The high-energy emission is dominant at the regions near the dislocation cores, while the blue emission is enhanced around the dislocation edges. The high-energy emission region is considered as a potential barrier that prevents the carriers for the blue emission from nonradiatively recombining at the dislocations.http://dx.doi.org/10.1155/2014/671210 |
| spellingShingle | Manh-Ha Doan Jaejin Lee Spatially Resolved Cathodoluminescence in the Vicinity of Defects in the High-Efficiency InGaN/GaN Blue Light Emitting Diodes Advances in Condensed Matter Physics |
| title | Spatially Resolved Cathodoluminescence in the Vicinity of Defects in the High-Efficiency InGaN/GaN Blue Light Emitting Diodes |
| title_full | Spatially Resolved Cathodoluminescence in the Vicinity of Defects in the High-Efficiency InGaN/GaN Blue Light Emitting Diodes |
| title_fullStr | Spatially Resolved Cathodoluminescence in the Vicinity of Defects in the High-Efficiency InGaN/GaN Blue Light Emitting Diodes |
| title_full_unstemmed | Spatially Resolved Cathodoluminescence in the Vicinity of Defects in the High-Efficiency InGaN/GaN Blue Light Emitting Diodes |
| title_short | Spatially Resolved Cathodoluminescence in the Vicinity of Defects in the High-Efficiency InGaN/GaN Blue Light Emitting Diodes |
| title_sort | spatially resolved cathodoluminescence in the vicinity of defects in the high efficiency ingan gan blue light emitting diodes |
| url | http://dx.doi.org/10.1155/2014/671210 |
| work_keys_str_mv | AT manhhadoan spatiallyresolvedcathodoluminescenceinthevicinityofdefectsinthehighefficiencyinganganbluelightemittingdiodes AT jaejinlee spatiallyresolvedcathodoluminescenceinthevicinityofdefectsinthehighefficiencyinganganbluelightemittingdiodes |