Synaptic behaviour in ZnO–rGO composites thin film memristor
A zinc oxide (ZnO)–reduced graphene oxide (rGO) composite thin film memristive device is reported. Further, it has been shown that it is possible to implement Hebbian learning rules like, the spike‐timing‐dependent plasticity, using this device. Furthermore, a circuit on PCB is developed; this circu...
Saved in:
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2017-03-01
|
| Series: | Electronics Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/el.2016.3655 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832096706303361024 |
|---|---|
| author | G.M. Khanal S. Acciarito G.C. Cardarilli A. Chakraborty L.D. Nunzio R. Fazzolari A. Cristini M. Re G. Susi |
| author_facet | G.M. Khanal S. Acciarito G.C. Cardarilli A. Chakraborty L.D. Nunzio R. Fazzolari A. Cristini M. Re G. Susi |
| author_sort | G.M. Khanal |
| collection | DOAJ |
| description | A zinc oxide (ZnO)–reduced graphene oxide (rGO) composite thin film memristive device is reported. Further, it has been shown that it is possible to implement Hebbian learning rules like, the spike‐timing‐dependent plasticity, using this device. Furthermore, a circuit on PCB is developed; this circuit can imitate the biological spike firing scheme and activate the memristor synapse. The fabricated device along with the custom made circuit can be extended for developing future neuromorphic circuit applications. |
| format | Article |
| id | doaj-art-cec8c24f15084d9f902f7bf516f54f41 |
| institution | Kabale University |
| issn | 0013-5194 1350-911X |
| language | English |
| publishDate | 2017-03-01 |
| publisher | Wiley |
| record_format | Article |
| series | Electronics Letters |
| spelling | doaj-art-cec8c24f15084d9f902f7bf516f54f412025-02-05T12:30:42ZengWileyElectronics Letters0013-51941350-911X2017-03-0153529629810.1049/el.2016.3655Synaptic behaviour in ZnO–rGO composites thin film memristorG.M. Khanal0S. Acciarito1G.C. Cardarilli2A. Chakraborty3L.D. Nunzio4R. Fazzolari5A. Cristini6M. Re7G. Susi8Department of Electronic EngineeringUniversity of Rome ‘Tor Vergata’RomeItalyDepartment of Electronic EngineeringUniversity of Rome ‘Tor Vergata’RomeItalyDepartment of Electronic EngineeringUniversity of Rome ‘Tor Vergata’RomeItalyDepartment of Electronic EngineeringUniversity of Rome ‘Tor Vergata’RomeItalyDepartment of Electronic EngineeringUniversity of Rome ‘Tor Vergata’RomeItalyDepartment of Electronic EngineeringUniversity of Rome ‘Tor Vergata’RomeItalyDepartment of Electronic EngineeringUniversity of Rome ‘Tor Vergata’RomeItalyDepartment of Electronic EngineeringUniversity of Rome ‘Tor Vergata’RomeItalyDepartment of Electronic EngineeringUniversity of Rome ‘Tor Vergata’RomeItalyA zinc oxide (ZnO)–reduced graphene oxide (rGO) composite thin film memristive device is reported. Further, it has been shown that it is possible to implement Hebbian learning rules like, the spike‐timing‐dependent plasticity, using this device. Furthermore, a circuit on PCB is developed; this circuit can imitate the biological spike firing scheme and activate the memristor synapse. The fabricated device along with the custom made circuit can be extended for developing future neuromorphic circuit applications.https://doi.org/10.1049/el.2016.3655synaptic behaviourcomposite thin film memristorcomposite thin film memristive devicememristive‐resistive switching deviceHebbian learning rulespike‐timing‐dependent plasticity |
| spellingShingle | G.M. Khanal S. Acciarito G.C. Cardarilli A. Chakraborty L.D. Nunzio R. Fazzolari A. Cristini M. Re G. Susi Synaptic behaviour in ZnO–rGO composites thin film memristor Electronics Letters synaptic behaviour composite thin film memristor composite thin film memristive device memristive‐resistive switching device Hebbian learning rule spike‐timing‐dependent plasticity |
| title | Synaptic behaviour in ZnO–rGO composites thin film memristor |
| title_full | Synaptic behaviour in ZnO–rGO composites thin film memristor |
| title_fullStr | Synaptic behaviour in ZnO–rGO composites thin film memristor |
| title_full_unstemmed | Synaptic behaviour in ZnO–rGO composites thin film memristor |
| title_short | Synaptic behaviour in ZnO–rGO composites thin film memristor |
| title_sort | synaptic behaviour in zno rgo composites thin film memristor |
| topic | synaptic behaviour composite thin film memristor composite thin film memristive device memristive‐resistive switching device Hebbian learning rule spike‐timing‐dependent plasticity |
| url | https://doi.org/10.1049/el.2016.3655 |
| work_keys_str_mv | AT gmkhanal synapticbehaviourinznorgocompositesthinfilmmemristor AT sacciarito synapticbehaviourinznorgocompositesthinfilmmemristor AT gccardarilli synapticbehaviourinznorgocompositesthinfilmmemristor AT achakraborty synapticbehaviourinznorgocompositesthinfilmmemristor AT ldnunzio synapticbehaviourinznorgocompositesthinfilmmemristor AT rfazzolari synapticbehaviourinznorgocompositesthinfilmmemristor AT acristini synapticbehaviourinznorgocompositesthinfilmmemristor AT mre synapticbehaviourinznorgocompositesthinfilmmemristor AT gsusi synapticbehaviourinznorgocompositesthinfilmmemristor |