Synaptic behaviour in ZnO–rGO composites thin film memristor
A zinc oxide (ZnO)–reduced graphene oxide (rGO) composite thin film memristive device is reported. Further, it has been shown that it is possible to implement Hebbian learning rules like, the spike‐timing‐dependent plasticity, using this device. Furthermore, a circuit on PCB is developed; this circu...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2017-03-01
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| Series: | Electronics Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/el.2016.3655 |
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| Summary: | A zinc oxide (ZnO)–reduced graphene oxide (rGO) composite thin film memristive device is reported. Further, it has been shown that it is possible to implement Hebbian learning rules like, the spike‐timing‐dependent plasticity, using this device. Furthermore, a circuit on PCB is developed; this circuit can imitate the biological spike firing scheme and activate the memristor synapse. The fabricated device along with the custom made circuit can be extended for developing future neuromorphic circuit applications. |
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| ISSN: | 0013-5194 1350-911X |