Electrostatic Field Effect Light-Emitting Diode
Gallium Nitride (GaN) based light-emitting diodes (LEDs) suffer from the persistent issue of high resistivity of the p-type layer, due to inefficient dopant activation at room temperature. Here, a novel Electrostatic Field Effect LED (EFELED) is demonstrated to solve this issue by introducing signif...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9086082/ |
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