Computation of Conductance and Capacitance for IC Interconnects on a General Lossy Multilayer Substrate
In this paper a simple method for analysis and modelling of transmission interconnect lines on general lossy multilayer substrates at high bit rates is presented. The analysis is based on semi-analytical Green's function approach and recurrence relation between the coefficients of potential in...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2001-01-01
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| Series: | Active and Passive Electronic Components |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1155/2001/87589 |
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| Summary: | In this paper a simple method for analysis and modelling of transmission interconnect lines
on general lossy multilayer substrates at high bit rates is presented. The analysis is based
on semi-analytical Green's function approach and recurrence relation between the
coefficients of potential in n and n + 1 layers, respectively. The electromagnetic concept of
free charge density is applied. It allows us to obtain integral equations between electric
scalar potential and charge density distributions. These equations are solved by the
Galerkin procedure of the Method of Moments. New approach is especially adequate to
model 2-D layered structures with planar boundaries for frequencies up to 20GHz
(quasistationary field approach). The transmission line parameters (capacitance and
conductance per unit length) for the given interconnect multilayer geometry are computed.
A discussion of the calculated line admittance in terms of technological and geometrical
parameters of the structure is given. A comparison of the numerical results from the
new procedure with the techniques presented in the previous publications are provided,
too. |
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| ISSN: | 0882-7516 1563-5031 |