AlGaAs Tunnel Junction (TJ)-VCSELs: A NEGF–Drift-Diffusion Approach

AlGaAs Tunnel Junction (TJ)-VCSELs: A NEGF–Drift-Diffusion Approach

This work reports a multiscale physics-based approach aimed at investigating the benefits of introducing a single tunnel junction (TJ) within conventional AlGaAs Vertical-Cavity Surface-Emitting Lasers (VCSELs). Our comprehensive VCSEL solver VENUS is augmented with a non-equilibrium Green&#x002...

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Bibliographic Details
Main Authors: Alberto Gullino, Valerio Torrelli, Martino D'Alessandro, Alberto Tibaldi, Francesco Bertazzi, Michele Goano, Pierluigi Debernardi
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Photonics Journal
Subjects:
Drift-diffusion
NEGF
physics-based
tunnel junction
VCSEL
Online Access:https://ieeexplore.ieee.org/document/10417142/
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