AlGaAs Tunnel Junction (TJ)-VCSELs: A NEGF–Drift-Diffusion Approach
This work reports a multiscale physics-based approach aimed at investigating the benefits of introducing a single tunnel junction (TJ) within conventional AlGaAs Vertical-Cavity Surface-Emitting Lasers (VCSELs). Our comprehensive VCSEL solver VENUS is augmented with a non-equilibrium Green...
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IEEE
2024-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/10417142/ |
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| author | Alberto Gullino Valerio Torrelli Martino D'Alessandro Alberto Tibaldi Francesco Bertazzi Michele Goano Pierluigi Debernardi |
| author_facet | Alberto Gullino Valerio Torrelli Martino D'Alessandro Alberto Tibaldi Francesco Bertazzi Michele Goano Pierluigi Debernardi |
| author_sort | Alberto Gullino |
| collection | DOAJ |
| description | This work reports a multiscale physics-based approach aimed at investigating the benefits of introducing a single tunnel junction (TJ) within conventional AlGaAs Vertical-Cavity Surface-Emitting Lasers (VCSELs). Our comprehensive VCSEL solver VENUS is augmented with a non-equilibrium Green's function (NEGF) approach to extract the band-to-band tunneling rate across the TJ. To showcase the NEGF-VENUS features, we apply it to the commercial <italic>pin</italic> oxide confined AlGaAs VCSEL previously investigated by VENUS, by inserting a TJ with minimal variations to the optical resonator. Besides finding the optimal position of TJ and oxide aperture, we can also compare the different hole injection schemes in the active region. Our results show the potential of doubling the maximum output power with the same threshold current, with perspectives of further enhancement by stacking more tunnel junctions. |
| format | Article |
| id | doaj-art-cd0507066a4b4c51aa6e5aa8766f15e2 |
| institution | Kabale University |
| issn | 1943-0655 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-cd0507066a4b4c51aa6e5aa8766f15e22025-01-24T00:00:26ZengIEEEIEEE Photonics Journal1943-06552024-01-011621910.1109/JPHOT.2024.336089710417142AlGaAs Tunnel Junction (TJ)-VCSELs: A NEGF–Drift-Diffusion ApproachAlberto Gullino0https://orcid.org/0000-0003-1570-0328Valerio Torrelli1https://orcid.org/0009-0009-4738-5554Martino D'Alessandro2https://orcid.org/0009-0002-4113-1333Alberto Tibaldi3https://orcid.org/0000-0002-0157-8512Francesco Bertazzi4https://orcid.org/0000-0002-9409-4807Michele Goano5https://orcid.org/0000-0003-2870-1549Pierluigi Debernardi6https://orcid.org/0000-0003-1776-3170Consiglio Nazionale delle Ricerche (CNR), Istituto di Elettronica e di Ingegneria dell'Informazione e delle Telecomunicazioni (IEIIT), Turin, ItalyDepartment of Electronics and Telecommunications, Politecnico di Torino, Turin, ItalyDepartment of Electronics and Telecommunications, Politecnico di Torino, Turin, ItalyConsiglio Nazionale delle Ricerche (CNR), Istituto di Elettronica e di Ingegneria dell'Informazione e delle Telecomunicazioni (IEIIT), Turin, ItalyConsiglio Nazionale delle Ricerche (CNR), Istituto di Elettronica e di Ingegneria dell'Informazione e delle Telecomunicazioni (IEIIT), Turin, ItalyConsiglio Nazionale delle Ricerche (CNR), Istituto di Elettronica e di Ingegneria dell'Informazione e delle Telecomunicazioni (IEIIT), Turin, ItalyConsiglio Nazionale delle Ricerche (CNR), Istituto di Elettronica e di Ingegneria dell'Informazione e delle Telecomunicazioni (IEIIT), Turin, ItalyThis work reports a multiscale physics-based approach aimed at investigating the benefits of introducing a single tunnel junction (TJ) within conventional AlGaAs Vertical-Cavity Surface-Emitting Lasers (VCSELs). Our comprehensive VCSEL solver VENUS is augmented with a non-equilibrium Green's function (NEGF) approach to extract the band-to-band tunneling rate across the TJ. To showcase the NEGF-VENUS features, we apply it to the commercial <italic>pin</italic> oxide confined AlGaAs VCSEL previously investigated by VENUS, by inserting a TJ with minimal variations to the optical resonator. Besides finding the optimal position of TJ and oxide aperture, we can also compare the different hole injection schemes in the active region. Our results show the potential of doubling the maximum output power with the same threshold current, with perspectives of further enhancement by stacking more tunnel junctions.https://ieeexplore.ieee.org/document/10417142/Drift-diffusionNEGFphysics-basedtunnel junctionVCSEL |
| spellingShingle | Alberto Gullino Valerio Torrelli Martino D'Alessandro Alberto Tibaldi Francesco Bertazzi Michele Goano Pierluigi Debernardi AlGaAs Tunnel Junction (TJ)-VCSELs: A NEGF–Drift-Diffusion Approach IEEE Photonics Journal Drift-diffusion NEGF physics-based tunnel junction VCSEL |
| title | AlGaAs Tunnel Junction (TJ)-VCSELs: A NEGF–Drift-Diffusion Approach |
| title_full | AlGaAs Tunnel Junction (TJ)-VCSELs: A NEGF–Drift-Diffusion Approach |
| title_fullStr | AlGaAs Tunnel Junction (TJ)-VCSELs: A NEGF–Drift-Diffusion Approach |
| title_full_unstemmed | AlGaAs Tunnel Junction (TJ)-VCSELs: A NEGF–Drift-Diffusion Approach |
| title_short | AlGaAs Tunnel Junction (TJ)-VCSELs: A NEGF–Drift-Diffusion Approach |
| title_sort | algaas tunnel junction tj vcsels a negf x2013 drift diffusion approach |
| topic | Drift-diffusion NEGF physics-based tunnel junction VCSEL |
| url | https://ieeexplore.ieee.org/document/10417142/ |
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