AlGaAs Tunnel Junction (TJ)-VCSELs: A NEGF–Drift-Diffusion Approach
This work reports a multiscale physics-based approach aimed at investigating the benefits of introducing a single tunnel junction (TJ) within conventional AlGaAs Vertical-Cavity Surface-Emitting Lasers (VCSELs). Our comprehensive VCSEL solver VENUS is augmented with a non-equilibrium Green...
Saved in:
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
|
| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10417142/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | This work reports a multiscale physics-based approach aimed at investigating the benefits of introducing a single tunnel junction (TJ) within conventional AlGaAs Vertical-Cavity Surface-Emitting Lasers (VCSELs). Our comprehensive VCSEL solver VENUS is augmented with a non-equilibrium Green's function (NEGF) approach to extract the band-to-band tunneling rate across the TJ. To showcase the NEGF-VENUS features, we apply it to the commercial <italic>pin</italic> oxide confined AlGaAs VCSEL previously investigated by VENUS, by inserting a TJ with minimal variations to the optical resonator. Besides finding the optimal position of TJ and oxide aperture, we can also compare the different hole injection schemes in the active region. Our results show the potential of doubling the maximum output power with the same threshold current, with perspectives of further enhancement by stacking more tunnel junctions. |
|---|---|
| ISSN: | 1943-0655 |