The Effects of Interdot Spacing and Dot Size on the Performance of InGaAs/GaAs QDIBSC
In0.53Ga0.47As/GaAs-based quantum dot intermediate band solar cells (QDIBSCs) have been designed and optimized for the next generation photovoltaic technology. The wave behavior of charge carriers inside the dot and their barrier have been analyzed with different dot sizes and interdot spacing. The...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2017-01-01
|
| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2017/9160381 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832563870229594112 |
|---|---|
| author | Sayeda Anika Amin Md. Tanvir Hasan Muhammad Shaffatul Islam |
| author_facet | Sayeda Anika Amin Md. Tanvir Hasan Muhammad Shaffatul Islam |
| author_sort | Sayeda Anika Amin |
| collection | DOAJ |
| description | In0.53Ga0.47As/GaAs-based quantum dot intermediate band solar cells (QDIBSCs) have been designed and optimized for the next generation photovoltaic technology. The wave behavior of charge carriers inside the dot and their barrier have been analyzed with different dot sizes and interdot spacing. The device characteristics such as short circuit current density, Jsc, open circuit voltage, Voc, and conversion efficiency, η, have been evaluated. Based on the behavior of electron wave function, it is found that varying the dot spacing leads to a change in the IB width and in the density of states, whereas varying the size of dots leads to a formation of a second IB. For a fixed dot spacing, two ranges of dot sizes vary the number of IBs in In0.53Ga0.47As/GaAs QDIBSC. Smaller dots of a size ranging from 2 nm to 5 nm form a single IB while larger dots of a size ranging from 6 nm to 9 nm can produce 2 IBs. The efficiency of 2 IBs close to 1 IB suggests that formation of multiple IBs can possibly enhance the device efficiency. |
| format | Article |
| id | doaj-art-cceaef7dbef14ca99dc3ea0602ba1678 |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2017-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-cceaef7dbef14ca99dc3ea0602ba16782025-02-03T01:12:20ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2017-01-01201710.1155/2017/91603819160381The Effects of Interdot Spacing and Dot Size on the Performance of InGaAs/GaAs QDIBSCSayeda Anika Amin0Md. Tanvir Hasan1Muhammad Shaffatul Islam2Department of Electrical and Electronic Engineering, American International University-Bangladesh (AIUB), Dhaka 1213, BangladeshDepartment of Electrical and Electronic Engineering, Jessore University of Science and Technology (JUST), Jessore 7408, BangladeshDepartment of Electrical and Electronic Engineering, World University of Bangladesh (WUB), Dhaka 1205, BangladeshIn0.53Ga0.47As/GaAs-based quantum dot intermediate band solar cells (QDIBSCs) have been designed and optimized for the next generation photovoltaic technology. The wave behavior of charge carriers inside the dot and their barrier have been analyzed with different dot sizes and interdot spacing. The device characteristics such as short circuit current density, Jsc, open circuit voltage, Voc, and conversion efficiency, η, have been evaluated. Based on the behavior of electron wave function, it is found that varying the dot spacing leads to a change in the IB width and in the density of states, whereas varying the size of dots leads to a formation of a second IB. For a fixed dot spacing, two ranges of dot sizes vary the number of IBs in In0.53Ga0.47As/GaAs QDIBSC. Smaller dots of a size ranging from 2 nm to 5 nm form a single IB while larger dots of a size ranging from 6 nm to 9 nm can produce 2 IBs. The efficiency of 2 IBs close to 1 IB suggests that formation of multiple IBs can possibly enhance the device efficiency.http://dx.doi.org/10.1155/2017/9160381 |
| spellingShingle | Sayeda Anika Amin Md. Tanvir Hasan Muhammad Shaffatul Islam The Effects of Interdot Spacing and Dot Size on the Performance of InGaAs/GaAs QDIBSC International Journal of Photoenergy |
| title | The Effects of Interdot Spacing and Dot Size on the Performance of InGaAs/GaAs QDIBSC |
| title_full | The Effects of Interdot Spacing and Dot Size on the Performance of InGaAs/GaAs QDIBSC |
| title_fullStr | The Effects of Interdot Spacing and Dot Size on the Performance of InGaAs/GaAs QDIBSC |
| title_full_unstemmed | The Effects of Interdot Spacing and Dot Size on the Performance of InGaAs/GaAs QDIBSC |
| title_short | The Effects of Interdot Spacing and Dot Size on the Performance of InGaAs/GaAs QDIBSC |
| title_sort | effects of interdot spacing and dot size on the performance of ingaas gaas qdibsc |
| url | http://dx.doi.org/10.1155/2017/9160381 |
| work_keys_str_mv | AT sayedaanikaamin theeffectsofinterdotspacinganddotsizeontheperformanceofingaasgaasqdibsc AT mdtanvirhasan theeffectsofinterdotspacinganddotsizeontheperformanceofingaasgaasqdibsc AT muhammadshaffatulislam theeffectsofinterdotspacinganddotsizeontheperformanceofingaasgaasqdibsc AT sayedaanikaamin effectsofinterdotspacinganddotsizeontheperformanceofingaasgaasqdibsc AT mdtanvirhasan effectsofinterdotspacinganddotsizeontheperformanceofingaasgaasqdibsc AT muhammadshaffatulislam effectsofinterdotspacinganddotsizeontheperformanceofingaasgaasqdibsc |