Low Power Emission Pulse Generation Circuit Based on n-Type Amorphous In-Ga-Zn-Oxide Transistors for Active-Matrix Organic Light-Emitting Diode Displays
This paper presents a low power emission (EM) pulse generation circuit using n-type amorphous In-Ga-Zn-Oxide (a-IGZO) semiconductor thin-film transistors (TFTs). The low power consumption is achieved by avoiding the shoot-through current paths through an optimized inverter circuit. The proposed circ...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-10-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/15/11/1330 |
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