Properties of original and irradiated phosphide-gallium LEDs
Spectral features of the original and irradiated with electrons with E = 2 MeV GaP light emitting diodes (LEDs) were studied. Recombination lines of the exciton bound on the N isoelectronic center and on the pair complexes NN1 were detected. The change in the spectral composition of radiation when p...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Institute for Nuclear Research, National Academy of Sciences of Ukraine
2024-06-01
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| Series: | Ядерна фізика та енергетика |
| Subjects: | |
| Online Access: | https://jnpae.kinr.kyiv.ua/25.2/Articles_PDF/jnpae-2024-25-0134-Chumak.pdf |
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| Summary: | Spectral features of the original and irradiated with electrons with E = 2 MeV GaP light emitting diodes (LEDs) were studied. Recombination lines of the exciton bound on the N isoelectronic center and on the pair complexes NN1 were detected. The change in the spectral composition of radiation when passing through a section of negative differential resistance is analyzed. Dose dependences of luminescence intensity were obtained for green GaP(N) and red GaP(Zn-O) LEDs. The maximum critical radiation dose was established, after which the LEDs lost their characteristic exciton emission mechanism. The results of the annealing of irradiated LEDs are given. |
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| ISSN: | 1818-331X 2074-0565 |