Fabrication and Characterization of Copper System Compound Semiconductor Solar Cells
Copper system compound semiconductor solar cells were produced by a spin-coating method, and their cell performance and structures were investigated. Copper indium disulfide- (CIS-) based solar cells with titanium dioxide (TiO2) were produced on F-doped SnO2 (FTO). A device based on an FTO/CIS/TiO2...
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| Format: | Article |
| Language: | English |
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Wiley
2010-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2010/562842 |
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| author | Ryosuke Motoyoshi Takeo Oku Atsushi Suzuki Kenji Kikuchi Shiomi Kikuchi Balachandran Jeyadevan Jhon Cuya |
| author_facet | Ryosuke Motoyoshi Takeo Oku Atsushi Suzuki Kenji Kikuchi Shiomi Kikuchi Balachandran Jeyadevan Jhon Cuya |
| author_sort | Ryosuke Motoyoshi |
| collection | DOAJ |
| description | Copper system compound semiconductor solar cells were produced by a spin-coating method, and their cell performance and structures were investigated. Copper indium disulfide- (CIS-) based solar cells with titanium dioxide (TiO2) were produced on F-doped SnO2 (FTO). A device based on an FTO/CIS/TiO2 structure provided better cell performance compared to that based on FTO/TiO2/CIS structure. Cupric oxide- (CuO-) and cuprous oxide- (Cu2O-) based solar cells with fullerene (C60) were also fabricated on FTO and indium tin oxide (ITO). The microstructure and cell performance of the CuO/C60 heterojunction and the Cu2O:C60 bulk heterojunction structure were investigated. The photovoltaic devices based on FTO/CuO/C60 and ITO/Cu2O:C60 structures provided short-circuit current density of 0.015 mAcm−2 and 0.11 mAcm−2, and open-circuit voltage of 0.045 V and 0.17 V under an Air Mass 1.5 illumination, respectively. The microstructures of the active layers were examined by X-ray diffraction and transmission electron microscopy. |
| format | Article |
| id | doaj-art-cb24b2bfd13844cc8273cec8fce69b51 |
| institution | Kabale University |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2010-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-cb24b2bfd13844cc8273cec8fce69b512025-02-03T05:49:44ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422010-01-01201010.1155/2010/562842562842Fabrication and Characterization of Copper System Compound Semiconductor Solar CellsRyosuke Motoyoshi0Takeo Oku1Atsushi Suzuki2Kenji Kikuchi3Shiomi Kikuchi4Balachandran Jeyadevan5Jhon Cuya6Department of Materials Science, The University of Shiga Prefecture, 2500 Hassaka, Hikone, Shiga 522-8533, JapanDepartment of Materials Science, The University of Shiga Prefecture, 2500 Hassaka, Hikone, Shiga 522-8533, JapanDepartment of Materials Science, The University of Shiga Prefecture, 2500 Hassaka, Hikone, Shiga 522-8533, JapanDepartment of Materials Science, The University of Shiga Prefecture, 2500 Hassaka, Hikone, Shiga 522-8533, JapanDepartment of Materials Science, The University of Shiga Prefecture, 2500 Hassaka, Hikone, Shiga 522-8533, JapanDepartment of Materials Science, The University of Shiga Prefecture, 2500 Hassaka, Hikone, Shiga 522-8533, JapanDepartment of Materials Science, The University of Shiga Prefecture, 2500 Hassaka, Hikone, Shiga 522-8533, JapanCopper system compound semiconductor solar cells were produced by a spin-coating method, and their cell performance and structures were investigated. Copper indium disulfide- (CIS-) based solar cells with titanium dioxide (TiO2) were produced on F-doped SnO2 (FTO). A device based on an FTO/CIS/TiO2 structure provided better cell performance compared to that based on FTO/TiO2/CIS structure. Cupric oxide- (CuO-) and cuprous oxide- (Cu2O-) based solar cells with fullerene (C60) were also fabricated on FTO and indium tin oxide (ITO). The microstructure and cell performance of the CuO/C60 heterojunction and the Cu2O:C60 bulk heterojunction structure were investigated. The photovoltaic devices based on FTO/CuO/C60 and ITO/Cu2O:C60 structures provided short-circuit current density of 0.015 mAcm−2 and 0.11 mAcm−2, and open-circuit voltage of 0.045 V and 0.17 V under an Air Mass 1.5 illumination, respectively. The microstructures of the active layers were examined by X-ray diffraction and transmission electron microscopy.http://dx.doi.org/10.1155/2010/562842 |
| spellingShingle | Ryosuke Motoyoshi Takeo Oku Atsushi Suzuki Kenji Kikuchi Shiomi Kikuchi Balachandran Jeyadevan Jhon Cuya Fabrication and Characterization of Copper System Compound Semiconductor Solar Cells Advances in Materials Science and Engineering |
| title | Fabrication and Characterization of Copper System Compound Semiconductor Solar Cells |
| title_full | Fabrication and Characterization of Copper System Compound Semiconductor Solar Cells |
| title_fullStr | Fabrication and Characterization of Copper System Compound Semiconductor Solar Cells |
| title_full_unstemmed | Fabrication and Characterization of Copper System Compound Semiconductor Solar Cells |
| title_short | Fabrication and Characterization of Copper System Compound Semiconductor Solar Cells |
| title_sort | fabrication and characterization of copper system compound semiconductor solar cells |
| url | http://dx.doi.org/10.1155/2010/562842 |
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