Modeling Asymmetric Shift in the Threshold Voltage of MOS Structures under Thermal Field Treatment
Introduction. Thermal field treatment (TFT) of MOS structures causes instability of the threshold voltage associated with the transport of mobile ions of alkaline earth metal impurities (mainly Na+) in the electric field of the gate dielectric. Experimental kinetics of accumulation and restoration o...
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| Main Authors: | , |
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| Format: | Article |
| Language: | Russian |
| Published: |
Saint Petersburg Electrotechnical University "LETI"
2025-05-01
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| Series: | Известия высших учебных заведений России: Радиоэлектроника |
| Subjects: | |
| Online Access: | https://re.eltech.ru/jour/article/view/996 |
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