Research Progress on Insulated Gate Bipolar Transistor (IGBT) Modules
With the rapid advancement of social productivity and technological innovation, the insulated gate bipolar transistor (IGBT) has emerged as a cornerstone in modern power electronic devices [...]
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| Format: | Article |
| Language: | English |
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MDPI AG
2025-02-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/16/2/197 |
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| _version_ | 1849718513986437120 |
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| author | Peisheng Liu Yaohui Deng |
| author_facet | Peisheng Liu Yaohui Deng |
| author_sort | Peisheng Liu |
| collection | DOAJ |
| description | With the rapid advancement of social productivity and technological innovation, the insulated gate bipolar transistor (IGBT) has emerged as a cornerstone in modern power electronic devices [...] |
| format | Article |
| id | doaj-art-ca877cfc63104f7cbe7cc56a703b8607 |
| institution | DOAJ |
| issn | 2072-666X |
| language | English |
| publishDate | 2025-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj-art-ca877cfc63104f7cbe7cc56a703b86072025-08-20T03:12:22ZengMDPI AGMicromachines2072-666X2025-02-0116219710.3390/mi16020197Research Progress on Insulated Gate Bipolar Transistor (IGBT) ModulesPeisheng Liu0Yaohui Deng1Department of Information Technology, Xinglin College Nantong University, Nantong 226236, ChinaJiangsu Key Laboratory of Semiconductor Device and Integrated Circuit Design, Packaging and Testing, School of Microelectronics and School of Integrated Circuits, Nantong University, Nantong 226019, ChinaWith the rapid advancement of social productivity and technological innovation, the insulated gate bipolar transistor (IGBT) has emerged as a cornerstone in modern power electronic devices [...]https://www.mdpi.com/2072-666X/16/2/197n/a |
| spellingShingle | Peisheng Liu Yaohui Deng Research Progress on Insulated Gate Bipolar Transistor (IGBT) Modules Micromachines n/a |
| title | Research Progress on Insulated Gate Bipolar Transistor (IGBT) Modules |
| title_full | Research Progress on Insulated Gate Bipolar Transistor (IGBT) Modules |
| title_fullStr | Research Progress on Insulated Gate Bipolar Transistor (IGBT) Modules |
| title_full_unstemmed | Research Progress on Insulated Gate Bipolar Transistor (IGBT) Modules |
| title_short | Research Progress on Insulated Gate Bipolar Transistor (IGBT) Modules |
| title_sort | research progress on insulated gate bipolar transistor igbt modules |
| topic | n/a |
| url | https://www.mdpi.com/2072-666X/16/2/197 |
| work_keys_str_mv | AT peishengliu researchprogressoninsulatedgatebipolartransistorigbtmodules AT yaohuideng researchprogressoninsulatedgatebipolartransistorigbtmodules |