INFLUENCE OF GAMMA RADIATION ON MOS/SOI TRANSISTORS
The results of experimental researches of influence of gamma radiation Со60 on test MOS/SOI transistors with different constructive-technologic features and electrical modes are submitted.
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| Main Authors: | Yu. V. Bogatyrev, S. B. Lastovsky, S. A. Soroka, S. V. Shwedov, D. A. Ogorodnikov |
|---|---|
| Format: | Article |
| Language: | Russian |
| Published: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Subjects: | |
| Online Access: | https://doklady.bsuir.by/jour/article/view/653 |
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