Photocell with two Schottky barrier contacts Al-p-Siand ohmic silicide contact
Way of the fabrication and results of studies of photoelectric features of photocell with two Schottky barrier opaque contacts Al-p-Si on one party of the silicon plate and ohmic silicide contact Ni2 Si-p-Si (or Pd2 Si-p-Si) situated on the opposite party of the plate are сconsidered. It is sh...
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| Format: | Article |
| Language: | English |
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Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education
2020-06-01
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| Series: | Омский научный вестник |
| Subjects: | |
| Online Access: | https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2020/3%20(171)/86-91%20%D0%91%D1%83%D1%80%D0%BB%D0%B0%D0%BA%D0%BE%D0%B2%20%D0%A0.%20%D0%91..pdf |
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| _version_ | 1832571129977372672 |
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| author | R. B. Burlakov |
| author_facet | R. B. Burlakov |
| author_sort | R. B. Burlakov |
| collection | DOAJ |
| description | Way of the fabrication and results of studies of photoelectric
features of photocell with two Schottky barrier opaque contacts
Al-p-Si on one party of the silicon plate and ohmic silicide contact
Ni2
Si-p-Si (or Pd2
Si-p-Si) situated on the opposite party of the
plate are сconsidered. It is shown that explored photocell can be
used for the transformation of the energy of the radiation in the
electrical energy at room temperature in near infrared region of
the spectrum (0,8–1,4) micron. This characteristic of the designed
photocell will allow to increase its application. Photocell possesses
a simple structure and technology with a time of its fabrication in
the interval (2,5–3) hour. |
| format | Article |
| id | doaj-art-c86e4984133d4816ab2d4df96a3cd597 |
| institution | Kabale University |
| issn | 1813-8225 2541-7541 |
| language | English |
| publishDate | 2020-06-01 |
| publisher | Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education |
| record_format | Article |
| series | Омский научный вестник |
| spelling | doaj-art-c86e4984133d4816ab2d4df96a3cd5972025-02-02T13:09:48ZengOmsk State Technical University, Federal State Autonoumos Educational Institution of Higher EducationОмский научный вестник1813-82252541-75412020-06-013 (171)869110.25206/1813-8225-2020-171-86-91Photocell with two Schottky barrier contacts Al-p-Siand ohmic silicide contactR. B. Burlakov0Dostoevsky Omsk State UniversityWay of the fabrication and results of studies of photoelectric features of photocell with two Schottky barrier opaque contacts Al-p-Si on one party of the silicon plate and ohmic silicide contact Ni2 Si-p-Si (or Pd2 Si-p-Si) situated on the opposite party of the plate are сconsidered. It is shown that explored photocell can be used for the transformation of the energy of the radiation in the electrical energy at room temperature in near infrared region of the spectrum (0,8–1,4) micron. This characteristic of the designed photocell will allow to increase its application. Photocell possesses a simple structure and technology with a time of its fabrication in the interval (2,5–3) hour.https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2020/3%20(171)/86-91%20%D0%91%D1%83%D1%80%D0%BB%D0%B0%D0%BA%D0%BE%D0%B2%20%D0%A0.%20%D0%91..pdfmethod of fabricating the photocellp-type siliconschottky barrier contacts al-p-sisilicidecontact ni2 si-p-sisilicidecontact pd2 si-p-si |
| spellingShingle | R. B. Burlakov Photocell with two Schottky barrier contacts Al-p-Siand ohmic silicide contact Омский научный вестник method of fabricating the photocell p-type silicon schottky barrier contacts al-p-si silicidecontact ni2 si-p-si silicidecontact pd2 si-p-si |
| title | Photocell with two Schottky barrier contacts Al-p-Siand ohmic silicide contact |
| title_full | Photocell with two Schottky barrier contacts Al-p-Siand ohmic silicide contact |
| title_fullStr | Photocell with two Schottky barrier contacts Al-p-Siand ohmic silicide contact |
| title_full_unstemmed | Photocell with two Schottky barrier contacts Al-p-Siand ohmic silicide contact |
| title_short | Photocell with two Schottky barrier contacts Al-p-Siand ohmic silicide contact |
| title_sort | photocell with two schottky barrier contacts al p siand ohmic silicide contact |
| topic | method of fabricating the photocell p-type silicon schottky barrier contacts al-p-si silicidecontact ni2 si-p-si silicidecontact pd2 si-p-si |
| url | https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2020/3%20(171)/86-91%20%D0%91%D1%83%D1%80%D0%BB%D0%B0%D0%BA%D0%BE%D0%B2%20%D0%A0.%20%D0%91..pdf |
| work_keys_str_mv | AT rbburlakov photocellwithtwoschottkybarriercontactsalpsiandohmicsilicidecontact |