Photocell with two Schottky barrier contacts Al-p-Siand ohmic silicide contact
Way of the fabrication and results of studies of photoelectric features of photocell with two Schottky barrier opaque contacts Al-p-Si on one party of the silicon plate and ohmic silicide contact Ni2 Si-p-Si (or Pd2 Si-p-Si) situated on the opposite party of the plate are сconsidered. It is sh...
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| Main Author: | |
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| Format: | Article |
| Language: | English |
| Published: |
Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education
2020-06-01
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| Series: | Омский научный вестник |
| Subjects: | |
| Online Access: | https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2020/3%20(171)/86-91%20%D0%91%D1%83%D1%80%D0%BB%D0%B0%D0%BA%D0%BE%D0%B2%20%D0%A0.%20%D0%91..pdf |
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| Summary: | Way of the fabrication and results of studies of photoelectric
features of photocell with two Schottky barrier opaque contacts
Al-p-Si on one party of the silicon plate and ohmic silicide contact
Ni2
Si-p-Si (or Pd2
Si-p-Si) situated on the opposite party of the
plate are сconsidered. It is shown that explored photocell can be
used for the transformation of the energy of the radiation in the
electrical energy at room temperature in near infrared region of
the spectrum (0,8–1,4) micron. This characteristic of the designed
photocell will allow to increase its application. Photocell possesses
a simple structure and technology with a time of its fabrication in
the interval (2,5–3) hour. |
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| ISSN: | 1813-8225 2541-7541 |