Study of Ge-Sb-Te Superlattice Structure Based on Topological Descriptors

Ge-Sb-Te superlattice is a new electronic material that is capable of storing nonvolatile phase-change memories with very low energy consumption. Topological descriptors are numerical values given to molecular structures that may be used to predict specific physical/chemical characteristics. In this...

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Bibliographic Details
Main Authors: Xiujun Zhang, Muhammad Naeem, Abdul Rauf, Adnan Aslam, Zafar Iqbal, Abudulai Issa
Format: Article
Language:English
Published: Wiley 2022-01-01
Series:Journal of Mathematics
Online Access:http://dx.doi.org/10.1155/2022/5747464
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Summary:Ge-Sb-Te superlattice is a new electronic material that is capable of storing nonvolatile phase-change memories with very low energy consumption. Topological descriptors are numerical values given to molecular structures that may be used to predict specific physical/chemical characteristics. In this work, we have investigated topological descriptors of the Ge-Sb-Te superlattice structure based on ev and ve-degree. We have calculated the Zagreb, geometric-arithmetic, Randic, and atom-bond connectivity indices of the Ge-Sb-Te superlattice structure using the ev- and ve-degrees. This kind of research may be beneficial for understanding the structure’s chemical and biological activity.
ISSN:2314-4785