Evaluation of Bonding Orbitals in Amorphous Silicon by Means of the Chemical Pseudopotential Method
The chemical pseudopotential method has been used by a number of workers in order to study the valence bands of amorphous tetrahedrally bonded semiconductors. However, various problems related to this method are unsolved. In this paper, a theoretical formulation tending to clarify some of these. pro...
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| Format: | Article |
| Language: | English |
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Wiley
1994-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/1994/98250 |
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| _version_ | 1850178670059061248 |
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| author | M. A. Grado Caffaro M. Grado Caffaro |
| author_facet | M. A. Grado Caffaro M. Grado Caffaro |
| author_sort | M. A. Grado Caffaro |
| collection | DOAJ |
| description | The chemical pseudopotential method has been used by a number of workers in order to study the
valence bands of amorphous tetrahedrally bonded semiconductors. However, various problems related
to this method are unsolved. In this paper, a theoretical formulation tending to clarify some of these.
problems is presented.
This formulation concerns bonding orbitals and is valid, in principle, for amorphous silicon. |
| format | Article |
| id | doaj-art-c5c70ce863b94de0884355080c2fcdbd |
| institution | OA Journals |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 1994-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-c5c70ce863b94de0884355080c2fcdbd2025-08-20T02:18:39ZengWileyActive and Passive Electronic Components0882-75161563-50311994-01-0116210510710.1155/1994/98250Evaluation of Bonding Orbitals in Amorphous Silicon by Means of the Chemical Pseudopotential MethodM. A. Grado Caffaro0M. Grado Caffaro1C./Julio Palacios, 11, 9º-B, Madrid 28029, SpainC./Julio Palacios, 11, 9º-B, Madrid 28029, SpainThe chemical pseudopotential method has been used by a number of workers in order to study the valence bands of amorphous tetrahedrally bonded semiconductors. However, various problems related to this method are unsolved. In this paper, a theoretical formulation tending to clarify some of these. problems is presented. This formulation concerns bonding orbitals and is valid, in principle, for amorphous silicon.http://dx.doi.org/10.1155/1994/98250 |
| spellingShingle | M. A. Grado Caffaro M. Grado Caffaro Evaluation of Bonding Orbitals in Amorphous Silicon by Means of the Chemical Pseudopotential Method Active and Passive Electronic Components |
| title | Evaluation of Bonding Orbitals in Amorphous Silicon by Means of
the Chemical Pseudopotential Method |
| title_full | Evaluation of Bonding Orbitals in Amorphous Silicon by Means of
the Chemical Pseudopotential Method |
| title_fullStr | Evaluation of Bonding Orbitals in Amorphous Silicon by Means of
the Chemical Pseudopotential Method |
| title_full_unstemmed | Evaluation of Bonding Orbitals in Amorphous Silicon by Means of
the Chemical Pseudopotential Method |
| title_short | Evaluation of Bonding Orbitals in Amorphous Silicon by Means of
the Chemical Pseudopotential Method |
| title_sort | evaluation of bonding orbitals in amorphous silicon by means of the chemical pseudopotential method |
| url | http://dx.doi.org/10.1155/1994/98250 |
| work_keys_str_mv | AT magradocaffaro evaluationofbondingorbitalsinamorphoussiliconbymeansofthechemicalpseudopotentialmethod AT mgradocaffaro evaluationofbondingorbitalsinamorphoussiliconbymeansofthechemicalpseudopotentialmethod |