APA (7th ed.) Citation

Gavalas, M., Gallou, Y., Chaussende, D., Blanquet, E., Mercier, F., & Zekentes, K. Progress in Polycrystalline SiC Growth by Low Pressure Chemical Vapor Deposition and Material Characterization. MDPI AG.

Chicago Style (17th ed.) Citation

Gavalas, Michail, Yann Gallou, Didier Chaussende, Elisabeth Blanquet, Frédéric Mercier, and Konstantinos Zekentes. Progress in Polycrystalline SiC Growth by Low Pressure Chemical Vapor Deposition and Material Characterization. MDPI AG.

MLA (9th ed.) Citation

Gavalas, Michail, et al. Progress in Polycrystalline SiC Growth by Low Pressure Chemical Vapor Deposition and Material Characterization. MDPI AG.

Warning: These citations may not always be 100% accurate.