Gavalas, M., Gallou, Y., Chaussende, D., Blanquet, E., Mercier, F., & Zekentes, K. Progress in Polycrystalline SiC Growth by Low Pressure Chemical Vapor Deposition and Material Characterization. MDPI AG.
Chicago Style (17th ed.) CitationGavalas, Michail, Yann Gallou, Didier Chaussende, Elisabeth Blanquet, Frédéric Mercier, and Konstantinos Zekentes. Progress in Polycrystalline SiC Growth by Low Pressure Chemical Vapor Deposition and Material Characterization. MDPI AG.
MLA (9th ed.) CitationGavalas, Michail, et al. Progress in Polycrystalline SiC Growth by Low Pressure Chemical Vapor Deposition and Material Characterization. MDPI AG.
Warning: These citations may not always be 100% accurate.