Modification of porous silicon using pulsed ion beam of nanosecond duration
The effect of a pulsed ion beam of nanosecond duration on the morphology, chemical composition, and electronic structure of porous silicon is studied. The gas sensitivity of the initial and irradiated samples is studied under exposure to NO2 and degassing in air. Its degradation is assessed ov...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education
2018-07-01
|
| Series: | Омский научный вестник |
| Subjects: | |
| Online Access: | https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2018/3%20(159)/75-79%20%D0%9F%D0%BE%D0%B2%D0%BE%D1%80%D0%BE%D0%B7%D0%BD%D1%8E%D0%BA%20%D0%A1.%20%D0%9D.,%20%D0%A0%D0%BE%D1%81%D0%BB%D0%B8%D0%BA%D0%BE%D0%B2%20%D0%92.%20%D0%95..pdf |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Be the first to leave a comment!