Modification of porous silicon using pulsed ion beam of nanosecond duration

Modification of porous silicon using pulsed ion beam of nanosecond duration

The effect of a pulsed ion beam of nanosecond duration on the morphology, chemical composition, and electronic structure of porous silicon is studied. The gas sensitivity of the initial and irradiated samples is studied under exposure to NO2 and degassing in air. Its degradation is assessed ov...

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Bibliographic Details
Main Authors: S. N. Povoroznyuk, V. E. Roslikov
Format: Article
Language:English
Published: Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education 2018-07-01
Series:Омский научный вестник
Subjects:
porous silicon
x-ray photoelectron spectroscopy
pulsed ion beam
gas sensitivity
Online Access:https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2018/3%20(159)/75-79%20%D0%9F%D0%BE%D0%B2%D0%BE%D1%80%D0%BE%D0%B7%D0%BD%D1%8E%D0%BA%20%D0%A1.%20%D0%9D.,%20%D0%A0%D0%BE%D1%81%D0%BB%D0%B8%D0%BA%D0%BE%D0%B2%20%D0%92.%20%D0%95..pdf
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