Modification of porous silicon using pulsed ion beam of nanosecond duration
The effect of a pulsed ion beam of nanosecond duration on the morphology, chemical composition, and electronic structure of porous silicon is studied. The gas sensitivity of the initial and irradiated samples is studied under exposure to NO2 and degassing in air. Its degradation is assessed ov...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education
2018-07-01
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| Series: | Омский научный вестник |
| Subjects: | |
| Online Access: | https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2018/3%20(159)/75-79%20%D0%9F%D0%BE%D0%B2%D0%BE%D1%80%D0%BE%D0%B7%D0%BD%D1%8E%D0%BA%20%D0%A1.%20%D0%9D.,%20%D0%A0%D0%BE%D1%81%D0%BB%D0%B8%D0%BA%D0%BE%D0%B2%20%D0%92.%20%D0%95..pdf |
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| Summary: | The effect of a pulsed ion beam of nanosecond duration on the
morphology, chemical composition, and electronic structure of
porous silicon is studied. The gas sensitivity of the initial and
irradiated samples is studied under exposure to NO2
and degassing
in air. Its degradation is assessed over time. It is established that
both the initial and irradiated samples have a sensitivity to NO2
. In
the case of the initial porous silicon, it disappears after 6 months,
and in irradiated silicon it decreases after 3 months and then
remains practically at the same level. This is a consequence of the
formation of a passivating film, which prevents the degradation of
the composition and properties of porous silicon when it comes
into contact with the environment. The presence of such a film,
represented by a SiO2
, is confirmed by X-ray photoelectron
spectroscopy (XPS) data. |
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| ISSN: | 1813-8225 2541-7541 |