DC Characteristics Optimization of a Double G-Shield 50 V RF LDMOS
An N-type 50 V RF LDMOS with a RESURF (reduced surface field) structure of dual field plates (grounded shield, or G-shield) was investigated. The effect of the two field plates and N-drift region, including the junction depth and dopant concentration, on the DC characteristics was analyzed by employ...
Saved in:
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2015-01-01
|
| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2015/379746 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832561796030922752 |
|---|---|
| author | Xiangming Xu Pengliang Ci Xiaoyu Tang Jing Shi Zhengliang Zhou Jingfeng Huang Peng-Fei Wang David Wei Zhang |
| author_facet | Xiangming Xu Pengliang Ci Xiaoyu Tang Jing Shi Zhengliang Zhou Jingfeng Huang Peng-Fei Wang David Wei Zhang |
| author_sort | Xiangming Xu |
| collection | DOAJ |
| description | An N-type 50 V RF LDMOS with a RESURF (reduced surface field) structure of dual field plates (grounded shield, or G-shield) was investigated. The effect of the two field plates and N-drift region, including the junction depth and dopant concentration, on the DC characteristics was analyzed by employing the Taurus TCAD device simulator. A high BV (breakdown voltage) can be achieved while keeping a low RDSON (on-resistance). The simulation results show that the N-drift region dopant concentration has an obvious effect on the BV and RDSON and the junction depth affected these values less. There is an optimized length for the second field plate for a given dopant concentration of the N-drift region. Both factors should be optimized together to determine the best DC characteristics. Meanwhile, the effect of the first field plate on the BV and RDSON can be ignored. According to the simulation results, 50 V RF LDMOS with an optimized RESURF structure of a double G-shield was fabricated using 0.35 µm technologies. The measurement data show the same trend as the TCAD simulation, where a BV of 118 V and RDSON of 26 ohm·mm were achieved. |
| format | Article |
| id | doaj-art-c4f8ab3e35a54a148559d75a7eb52a41 |
| institution | Kabale University |
| issn | 1687-8108 1687-8124 |
| language | English |
| publishDate | 2015-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Condensed Matter Physics |
| spelling | doaj-art-c4f8ab3e35a54a148559d75a7eb52a412025-02-03T01:24:17ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242015-01-01201510.1155/2015/379746379746DC Characteristics Optimization of a Double G-Shield 50 V RF LDMOSXiangming Xu0Pengliang Ci1Xiaoyu Tang2Jing Shi3Zhengliang Zhou4Jingfeng Huang5Peng-Fei Wang6David Wei Zhang7State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 201203, ChinaHuahong Grace Semiconductor Manufacturing Corporation, Shanghai 201203, ChinaHuahong Grace Semiconductor Manufacturing Corporation, Shanghai 201203, ChinaHuahong Grace Semiconductor Manufacturing Corporation, Shanghai 201203, ChinaHuahong Grace Semiconductor Manufacturing Corporation, Shanghai 201203, ChinaHuahong Grace Semiconductor Manufacturing Corporation, Shanghai 201203, ChinaState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 201203, ChinaState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 201203, ChinaAn N-type 50 V RF LDMOS with a RESURF (reduced surface field) structure of dual field plates (grounded shield, or G-shield) was investigated. The effect of the two field plates and N-drift region, including the junction depth and dopant concentration, on the DC characteristics was analyzed by employing the Taurus TCAD device simulator. A high BV (breakdown voltage) can be achieved while keeping a low RDSON (on-resistance). The simulation results show that the N-drift region dopant concentration has an obvious effect on the BV and RDSON and the junction depth affected these values less. There is an optimized length for the second field plate for a given dopant concentration of the N-drift region. Both factors should be optimized together to determine the best DC characteristics. Meanwhile, the effect of the first field plate on the BV and RDSON can be ignored. According to the simulation results, 50 V RF LDMOS with an optimized RESURF structure of a double G-shield was fabricated using 0.35 µm technologies. The measurement data show the same trend as the TCAD simulation, where a BV of 118 V and RDSON of 26 ohm·mm were achieved.http://dx.doi.org/10.1155/2015/379746 |
| spellingShingle | Xiangming Xu Pengliang Ci Xiaoyu Tang Jing Shi Zhengliang Zhou Jingfeng Huang Peng-Fei Wang David Wei Zhang DC Characteristics Optimization of a Double G-Shield 50 V RF LDMOS Advances in Condensed Matter Physics |
| title | DC Characteristics Optimization of a Double G-Shield 50 V RF LDMOS |
| title_full | DC Characteristics Optimization of a Double G-Shield 50 V RF LDMOS |
| title_fullStr | DC Characteristics Optimization of a Double G-Shield 50 V RF LDMOS |
| title_full_unstemmed | DC Characteristics Optimization of a Double G-Shield 50 V RF LDMOS |
| title_short | DC Characteristics Optimization of a Double G-Shield 50 V RF LDMOS |
| title_sort | dc characteristics optimization of a double g shield 50 v rf ldmos |
| url | http://dx.doi.org/10.1155/2015/379746 |
| work_keys_str_mv | AT xiangmingxu dccharacteristicsoptimizationofadoublegshield50vrfldmos AT pengliangci dccharacteristicsoptimizationofadoublegshield50vrfldmos AT xiaoyutang dccharacteristicsoptimizationofadoublegshield50vrfldmos AT jingshi dccharacteristicsoptimizationofadoublegshield50vrfldmos AT zhengliangzhou dccharacteristicsoptimizationofadoublegshield50vrfldmos AT jingfenghuang dccharacteristicsoptimizationofadoublegshield50vrfldmos AT pengfeiwang dccharacteristicsoptimizationofadoublegshield50vrfldmos AT davidweizhang dccharacteristicsoptimizationofadoublegshield50vrfldmos |