Germanium Nanocrystals Embedded in Silicon Dioxide for Floating Gate Memory Devices
Metal-oxide-semiconductor (MOS) capacitors with tri-layer structure consisting of rf magnetron sputtered grown germanium (Ge) nanocrystals (NCs) and silicon dioxide (SiO2) layers sandwiched between thermally grown tunnel and sputtered grown cap oxide layers of SiO2 were fabricated on p-Si substrates...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2011-01-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%205/articles/jnep_2011_V3_N1(Part5)_0878-0883.pdf |
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| Summary: | Metal-oxide-semiconductor (MOS) capacitors with tri-layer structure consisting of rf magnetron sputtered grown germanium (Ge) nanocrystals (NCs) and silicon dioxide (SiO2) layers sandwiched between thermally grown tunnel and sputtered grown cap oxide layers of SiO2 were fabricated on p-Si substrates. Plane view transmission electron micrographs revealed the formation of spherically shaped and uniformly distributed Ge NCs. The optical and electronic characteristics of tri-layer structures were studied through photoluminescence (PL) spectroscopy and capacitance-voltage (C-V) measurements, respectively. Frequency dependent electrical properties of the structures have been studied. The optical emission characteristics support the confinement of the carriers in Ge NCs embedded in oxide matrices. An anticlockwise hysteresis in C-V characteristics suggests electron injection and trapping in Ge NCs. |
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| ISSN: | 2077-6772 |