Electrons, Localization but no Hopping: Disorder as Key for Understanding Charge Transport in Mesoporous Silicon

Electrons, Localization but no Hopping: Disorder as Key for Understanding Charge Transport in Mesoporous Silicon

This article presents a unique study on the charge carrier transport in electrochemically anodized mesoporous silicon by combining macroscopic conductivity and thermopower measurements. Temperature‐dependent electrical conductivity measurements reveal a thermally activated transport in extended elec...

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Bibliographic Details
Main Authors: Tommy Hofmann, Haider Haseeb, Danny Kojda, Natalia Gostkowska‐Lekner, Klaus Habicht
Format: Article
Language:English
Published: Wiley-VCH 2025-04-01
Series:Small Structures
Subjects:
disorder
localization
mobility edge
nanostructure
silicon
Online Access:https://doi.org/10.1002/sstr.202400437
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