APA (7th ed.) Citation

Hofmann, T., Haseeb, H., Kojda, D., Gostkowska‐Lekner, N., & Habicht, K. Electrons, Localization but no Hopping: Disorder as Key for Understanding Charge Transport in Mesoporous Silicon. Wiley-VCH.

Chicago Style (17th ed.) Citation

Hofmann, Tommy, Haider Haseeb, Danny Kojda, Natalia Gostkowska‐Lekner, and Klaus Habicht. Electrons, Localization but No Hopping: Disorder as Key for Understanding Charge Transport in Mesoporous Silicon. Wiley-VCH.

MLA (9th ed.) Citation

Hofmann, Tommy, et al. Electrons, Localization but No Hopping: Disorder as Key for Understanding Charge Transport in Mesoporous Silicon. Wiley-VCH.